01
Oct, 2014-Ver1.0
GENERAL DESCRIPTION
The HM2301BSR is the P-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance.
FEATURES
● RDS(ON)= 0.48Ω @VGS=-4.5V
● RDS(ON)= 0.67Ω @VGS=-2.5V
● RDS(ON)= 0.95Ω @VGS=-1.8V
● RDS(ON)= 2.20Ω @VGS=-1.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
● Capable doing Cu wire bonding
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
● DSC
Parameter Symbol
Maximum Ratings
Unit
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±6 V
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
HM2301BSR
P-Channel 20V (D-S) MOSFET
Marking and pin Assignment
SOT-523 top view
2301
02
Oct, 2014-Ver1.0
Notes: a. Based on Eutectic paste and bond wire Cu wire 1mil×1(S), Cu wire 1mil×1(G) on each die of SOT-523 package.
b. Pulse t
est; pulse width ≦ 300us, duty cycle≦ 2%.
c. H&M SEMI reserves the right to improve product design, functions and reliability without notice.
Symbol
Parameter
Limit
Min
Typ
Max
Unit
STATIC
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250μA
-20
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250μA
-0.45
-1.2
V
IGSS
Gate Leakage Current
VDS=0V, VGS=±4.5V
±10
μA
IDSS
Zero Gate Voltage Drain Current
VDS=-16V, VGS=0V
-1
μA
RDS(ON)
Drain-Source On-Resistance
a
VGS=-4.5V, ID=-780mA
0.35
0.48
Ω
VGS=-2.5V, ID=-660mA
0.44
0.67
VGS=-1.8V, ID=-100mA
0.55
0.95
VGS=-1.5V, ID=-100mA
0.78
2.20
VSD
Diode Forward Voltage
IS=-350mA, VGS=0V
-0.8
-1.2
V
DYNAMIC
Ciss
Input Capacitance
VDS=-16V, VGS=0V, f=1MHZ
152
pF
COSS
Output Capacitance
18.5
Crss
Reverse Transfer Capacitance
6
Qg
Total Gate Charge
VDS=-16V, VGS=-4.5V, ID=-200mA
2.8
nC
Qgs
Gate-Source Charge
2.1
Qgd
Gate-Drain Charge
0.5
td(on)
Turn-On Delay Time
VDD=-10V, RL =50Ω
VGEN=-5V,RG=10Ω
ID=-200mA
51.3
ns
tr
Turn-On Rise Time
24.2
td(off)
Turn-Off Delay Time
246
tf
Turn-Off Fall Time
81.2
Electrical Characteristics (TJ =25℃ Unless Otherwise Specified)
HM2301BSR
P-Channel 20V (D-S) MOSFET