P-Channel Enhancement Mode Power MOSFET
Description
The HM2301B uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications.
General Features
● V
DS
= -20V,I
D
= -2.5A
R
DS(ON)
< 160mΩ @ V
GS
=-2.5V
R
DS(ON)
< 120mΩ @ V
GS
=-4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
● PWM applications
● Load switch
D
G
S
Schematic diagram
Marking and pin assignment
SOT-23 top view
Package Marking and Ordering Information
Device Marking Device Device Package Reel Size Tape width Quantity
A12SHB HM2301B SOT-23 Ø180mm 8 mm 3000 units
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
-20 V
Gate-Source Voltage
V
GS
±12 V
Drain Current-Continuous
I
D
-2.5 A
Drain Current -Pulsed
(Note 1)
I
DM
-10 A
Maximum Power Dissipation
P
D
0.9 W
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55 To 150 ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θJA
138 /W℃
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V I
D
=-250μA -20 - V
Zero Gate Voltage Drain Current I
DSS
V
DS
=-20V,V
GS
=0V - - -1 μA
A1SHB
HM2301B
Parameter Symbol Condition Min Typ Max Unit
Gate-Body Leakage Current I
GSS
V
GS
=±12V,V
DS
=0V - - ±100 nA
On Characteristics
(Note 3)
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
,I
D
=-250μA -0.4 -0.7 -1 V
V
GS
=-4.5V, I
D
=-2 A - 78 120 mΩ
Drain-Source On-State Resistance R
DS(ON)
V
GS
=-2.5V, I
D
=-1.8A - 102 160 mΩ
Forward Transconductance g
FS
V
DS
=-5V,I
D
=-1A 6 - - S
Dynamic Characteristics
(Note4)
Input Capacitance C
lss
- 325 - PF
Output Capacitance C
oss
- 63 - PF
Reverse Transfer Capacitance C
rss
V
DS
=-10V,V
GS
=0V,
F=1.0MHz
- 37 - PF
Switching Characteristics
(Note 4)
Turn-on Delay Time t
d(on)
- 11 - nS
Turn-on Rise Time t
r
- 5.5 - nS
Turn-Off Delay Time t
d(off)
- 22 - nS
Turn-Off Fall Time t
f
V
DD
=-10V, R
L
=5Ω
V
GS
=-4.5V,R
GEN
=3Ω
- 8 - nS
Total Gate Charge Q
g
- 3.2 - nC
Gate-Source Charge Q
gs
- 0.6 - nC
Gate-Drain Charge Q
gd
V
DS
=-10V,I
D
=-2A,
V
GS
=-4.5V
- 0.9 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
V
SD
V
GS
=0V,I
S
=2A - - -1.2 V
Diode Forward Current
(Note 2)
I
S
- - -2.5 A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . %
4. Guaranteed by design, not subject to production
HM2301B