Page v1.1
1
HM2301
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM2301 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
GENERAL FEATURES
● V
DS
= -20V,I
D
= -3A
R
DS(ON)
< 140mΩ @ V
GS
=-2.5V
R
DS(ON)
< 110mΩ @ V
GS
=-4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●PWM applications
●Load switch
●Power management
D
G
S
Schematic diagram
Marking and pin Assignment
SOT-23 top view
Package Marking And Ordering Information
Device Marking Device Device Package Reel Size Tape width Quantity
016M HM2301 SOT-23 Ø180mm 8 mm 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
-20 V
Gate-Source Voltage
V
GS
±12 V
Drain Current-Continuous
I
D
-3 A
Drain Current -Pulsed (Note 1)
I
DM
-10 A
Maximum Power Dissipation
P
D
1 W
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55 To 150 ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2) R
θJA
125 /W℃
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V I
D
=-250μA -20 -24 - V
Zero Gate Voltage Drain Current I
DSS
V
DS
=-20V,V
GS
=0V - - -1 μA
016M
Page v1.1
2
Gate-Body Leakage Current I
GSS
V
GS
=±10V,V
DS
=0V - - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
,I
D
=-250μA -0.4 -0.7 -1 V
V
GS
=-4.5V, I
D
=-3A - 64 110 mΩ
Drain-Source On-State Resistance R
DS(ON)
V
GS
=-2.5V, I
D
=-2A - 89 140 mΩ
Forward Transconductance g
FS
V
DS
=-5V,I
D
=-2.8A - 9.5 - S
Dynamic Characteristics (Note4)
Input Capacitance C
lss
- 405 - PF
Output Capacitance C
oss
- 75 - PF
Reverse Transfer Capacitance C
rss
V
DS
=-10V,V
GS
=0V,
F=1.0MHz
- 55 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time t
d(on)
- 11 - nS
Turn-on Rise Time t
r
- 35 - nS
Turn-Off Delay Time t
d(off)
- 30 - nS
Turn-Off Fall Time t
f
V
DD
=-10V,I
D
=-1A
V
GS
=-4.5V,R
GEN
=10Ω
- 10 - nS
Total Gate Charge Q
g
- 3.3 12 nC
Gate-Source Charge Q
gs
- 0.7 - nC
Gate-Drain Charge Q
gd
V
DS
=-10V,I
D
=-3A,
V
GS
=-2.5V
- 1.3 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) V
SD
V
GS
=0V,I
S
=1.3A - - -1.2 V
Diode Forward Current (Note 2) I
S
- - -1.3 A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
HM2301