www.xindamao.com.cn 1 / 11 2022.11 Ver1.1
XD020H065CX1L3，XD020H065CX1H3, XD020H065CX1S3
Trench Field-Stop Technology IGBT
Features
◼ 650V, 20A
◼ V
CE(sat)(typ.)
=2.0V@V
GE
=15V, I
C
=20A
◼ Maximum Junction Temperature 175℃
◼ Pb-free Lead Plating; RoHS Compliant
Applications
◼ Solar Converters
◼ Uninterrupted Power Supply
◼ Welding Converters
◼ Mid to High Range Switching Frequency Converters
Key Performance and Package Parameters
Order codes
V
CE
I
C
V
CEsat
, T
vj
=25℃
T
vjmax
Marking
Package
XD020H065CX1L3
650V
20A
2.0V
175℃
D20H65CX1
TO220-3L
XD020H065CX1H3
650V
20A
2.0V
175℃
D20H65CX1
TO220F-3L
XD020H065CX1S3
650V
20A
2.0V
175℃
D20H65CX1
TO247-3L
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage
650
V
V
GES
Gate-Emitter Voltage
±20
V
I
C
Continuous Collector Current (T
C
=25℃)
40
A
Continuous Collector Current (T
C
=100℃)
20
A
I
CM
Pulsed Collector Current (Note 1)
60
A
P
D
Maximum Power Dissipation (T
C
=25℃) (Note 2)
94
W
Maximum Power Dissipation (T
C
=100℃) (Note 2)
47
W
T
J
Operating Junction Temperature Range
-40 to 175
℃
T
STG
Storage Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Conditions
Max.
Unit
R
θJC
Thermal Resistance, Junction to Case for IGBT
TO220-3L
1.6
℃/W
TO220F-3L
1.9
℃/W
TO247-3L
1.2
℃/W
R
θJC
Thermal Resistance, Junction to Case for Diode
TO220-3L
2.7
℃/W
TO220F-3L
2.9
℃/W
TO247-3L
2.4
℃/W
www.xindamao.com.cn 2 / 11 2022.11 Ver1.1
XD020H065CX1L3，XD020H065CX1H3, XD020H065CX1S3
Electrical Characteristics (T
c
=25℃ unless otherwise noted.)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BV
CES
Collector-Emitter
Breakdown Voltage
V
GE
=0V, I
C
=200uA
650
---
---
V
I
CES
Collector-Emitter Leakage
Current
V
CE
=650V, V
GE
=0V
---
---
40
uA
I
GES
Gate Leakage Current,
Forward
V
GE
=20V, V
CE
=0V
---
---
100
nA
Gate Leakage Current,
Reverse
V
GE
=-20V, V
CE
=0V
---
---
100
nA
V
GE(th)
Gate Threshold Voltage
V
GE
=V
CE
, I
C
=150uA
3.0
3.9
4.8
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
GE
=15V, I
C
=20A, T
j
=25℃
---
2.0
2.40
V
V
GE
=15V, I
C
=20A, T
j
=125℃
---
2.40
---
V
Q
G
Total Gate Charge
V
CC
=520V
V
GE
=15V
I
C
=20A
---
24.38
---
nC
Q
GE
Gate-Emitter Charge
---
5.82
---
nC
Q
GC
Gate-Collector Charge
---
6.59
---
nC
t
d(on)
Turn-on Delay Time
V
CC
=400V
V
GE
=15V
I
C
=20A
R
G
=39Ω
Inductive Load
T
C
=25℃
---
5
---
ns
t
r
Turn-on Rise Time
---
28
---
ns
t
d(off)
Turn-off Delay Time
---
70
---
ns
t
f
Turn-off Fall Time
---
144
---
ns
E
on
Turn-on Switching Loss
---
0.2
---
mJ
E
off
Turn-off Switching Loss
---
0.45
---
mJ
E
ts
Total Switching Loss
---
0.65
---
mJ
C
ies
Input Capacitance
V
CE
=25V
V
GE
=0V
f =1MHz
---
703
---
pF
C
oes
Output Capacitance
---
91
---
pF
C
res
Reverse Transfer
Capacitance
---
6
---
pF
SCSOA
Short Circuit Safe
Operation Area
V
GE
=15V, V
CC
≤400V,
T
J,start
≤25℃
10
---
---
uS