SOT-23
1.
BASE
2.
EMITTER
3.
COLLECTOR
2SC3356 TRANSISTOR (NPN)
FEATURES
z Low Noise and High Gain
z High Power Gain
Symbol Parameter Value Unit
BV
CBO
Collector to Base Voltage 20
V
BV
CEO
Collector to Emitter Voltage 12
V
BV
EBO
Emitter to Base Voltage 3
V
I
C
Collector Current 100 mA
P
C
Power Dissipation
200 mW
T
j
Junction Temperature 150
℃
T
stg
Storage Temperature
-55～+150 ℃
P
a
r
a
m
e
t
e
r
Symbolol
Test conditions
Co
llecto
r
-b
ase b
r
eakd
o
w
n
v
o
lt
ag
e
V
(BR)CBO
I
C
=10μA, I
E
=0 20
V
Collector-emitter breakdown vo
ltage
V
(BR)CEO
I
C
=1mA, I
B
=0 12
V
Emitter-base breakdown volt
age
V
(BR)EBO
I
E
=10μA, I
C
=0 3
V
Collector cut-off current
I
CBO
V
CB
=10V, I
E
=
0
1
μA
Emitter cut-off current
I
EBO
V
EB
=1V, I
C
=0
1
μA
DC current gain
h
FE
V
CE
=10V, I
C
=20mA
50 250
2
dB
f
T
7
GHz
Min
Typ
Max Unit
VCE=10V, IC= 7mA, f = 1GHz
Transition frequency
Noise figure
NF
V
CE
=10V, I
C
=20mA
250-300
80 -160
M
ar
ki
n
g R
23 R
24 R
25
Rank Q R S
Range
125-250
50 -100
www.jxndcn.com
SOT-23 Plastic-Encapsulate Transistors
2SC3356
CLASSIFICATION OF h
FE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
JXND ELECTRONICS CO.,LTD
