z
Features
1.High transition frequency.(Typ.f
T
=3.2GHz)
2.Small rbb`Cc and high gain.(Typ.4ps)
3.Small NF.
MAXIMUM RATINGS (T
A
= 25
°
C unless otherwise noted)
Parameter Symbol Value Unit
Collector-Base V oltage V
CBO
20 V
Collector-Emitter Voltage V
CEO
11 V
Emitter-base voltage V
EBO
3V
Collector Current I
C
50 mA
Collector power dissipation P
C
0.2 W
Junction temperature T
j
150 °C
Storage temperature T
stg
-55~+150 °C
ELECTRICAL CHARACTERISTICS(T
A
= 25
°
C)
Par amet er Symbol Min. Typ Max. Unit Conditions
Collector-base breakdown voltage BV
CBO
20
--
VI
C
=10µA
Collector-emitter breakdown voltage BV
CEO
11
--
VI
C
=1mA
Emitter-base breakdown voltage BV
EBO
3
--
VI
E
=10µA
Collector cutoff current I
CBO
--
0.5 µAV
CB
=10V
Emitter cutoff current I
EBO
--
0.5 µAV
EB
=2V
Collector-emitter saturation voltage V
CE(sat)
--
0.5 V I
C
/I
B
=10mA/5mA
DC current transfer ratio h
FE
56
-
180
-
V
CE
/I
C
=10V/5mA
Transition frequency f
T
1.4 3.2
-
GHz V
CE
=10V, I
E
=-10mA, f=500MHz
Output capacitance Cob
-
0.8 1.5 pF V
CB
=10V, I
E
=0A, f=1MHz
Collector-base time constant rb b `C c
-
412psV
CB
=10V, I
C
=10mA, f=31.8MHz
Noise factor N F
-
3.5
-
dB V
CE
=6V, I
C
=2mA, f=500MHz,Rg=50Ω
DEVICE MARKING
L2SC3838LT1G;S-L2SC3838LT1G=AD
1
BASE
2
EMITTER
COLLECTOR
3
1
2
3
4.
ORDERING INFORMATION
Device Package
Shipping
3000/Tape & Reel
SOT-23
SOT-23 10000/Tape & Reel
z
We declare that the material of product compliance with RoHS requirements.
SOT-23
5.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
2SC3838LT3G
S-2SC3838LT3G
www.jxndcn.com
JXND ELECTRONICS CO.,LTD
High Frequency Amplifier Transistor
2SC3838LT1G,S-2SC3838LT1G
2SC3838LT1G
S-2SC3838LT1G