z
Features
1.High transition frequency.(Typ.f
T
=1.5GHz)
2.Small rbb`Cc and high gain.(Typ.6ps)
3.Small NF.
MAXIMUM RATINGS (T
A
= 25
°
C unless otherwise noted)
Parameter Symbol Value Unit
Collector-Base V oltage V
CBO
30 V
Collector-Emitter Voltage V
CEO
18 V
Emitter-base voltage V
EBO
3V
Collector Current I
C
50 mA
Collector power dissipation P
C
0.2 W
Junction temperature T
j
150 °C
Storage temperature T
stg
-55~+150 °C
ELECTRICAL CHARACTERISTICS(T
A
= 25
°
C)
Par amet er Symbol Min. Typ Max. Unit Conditions
Collector-base breakdown voltage BV
CBO
30
--
VI
C
=10µA
Collector-emitter breakdown voltage BV
CEO
18
--
VI
C
=1mA
Emitter-base breakdown voltage BV
EBO
3
--
VI
E
=10µA
Collector cutoff current I
CBO
--
0.5 µAV
CB
=10V
Emitter cutoff current I
EBO
--
0.5 µAV
EB
=2V
Collector-emitter saturation voltage V
CE(sat)
--
0.5 V I
C
/I
B
=20mA/4mA
DC current transfer ratio h
FE
56
-
180
-
V
CE
/I
C
=10V/10mA
Transition frequency f
T
600 1500
-
MHz V
CB
=10V, I
C
=10mA, f=200MHz
Output capacitance Cob
-
0.9 1.5 pF V
CB
=10V, I
E
=0A, f=1MHz
Collector-base time constant rb b `C c
-
613psV
CB
=10V, I
C
=10mA, f=31.8MHz
Noise factor N F
-
4.5
-
dB V
CE
=12V, I
C
=2mA, f=200MHz,Rg=50Ω
DEVICE MARKING
2SC3837LT1G;S-2SC3837LT1G=AP
1
BASE
2
EMITTER
COLLECTOR
3
1
2
3
4.
ORDERING INFORMATION
Device Package
Shipping
3000/Tape & Reel
SOT-23
SOT-23 10000/Tape & Reel
z
We declare that the material of product compliance with RoHS requirements.
SOT-23
5.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
2SC3837LT1G
S-2SC3837LT1G
2SC3837LT3G
S-2SC3837LT3G
www.jxndcn.com
JXND ELECTRONICS CO.,LTD
High-Frequency Amplifier Transistor
L2SC3837LT1G，S-L2SC3837LT1G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
DIM
MIN M AX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
SOT
-
23
D
J
K
L
A
C
B
S
H
GV
12
3
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
www.jxndcn.com
JXND ELECTRONICS CO.,LTD
High-Frequency Amplifier Transistor
2SC3837LT1G，S-2SC3837LT1G