DESCRIPTION
The
2SC3356RWT1G
is
an
NPN
silicon epitaxial transistor
designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
FEATURES
• Low Noise and High Gain
NF = 1.1 dB TYP., G
a
= 11 dB TYP. @V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
• High Power Gain
MAG = 13 dB TYP. @V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage V
CBO
20 V
Collector to Emitter Voltage V
CEO
9 V
Emitter to Base Voltage V
EBO
3.0 V
Collector Current I
C
100 mA
Total Power Dissipation P
T
150 mW
Junction Temperature T
j
150
C
Storage TemperatureT
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current I
CBO
1.0
AV
CB
= 10 V, I
E
= 0
Emitter Cutoff Current I
EBO
1.0
AV
EB
= 1.0 V, I
C
= 0
DC Current Gainh
F
E
75 170 320 V
CE
= 8 V, I
C
= 25mA
Gain Bandwidth Product f
T
7 GHz V
CE
= 10 V, I
C
= 20 mA
Feed-Back Capacitance C
re
** 0.55 1.0 pF V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21
e
2
11.5 dB V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure NF 1.1 2.0 dB V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
* Pulse Measurement PW
350
s, Duty Cycle
2 %
* The emitter terminal and the case shall be connected to the guard term inal of the three-term inal capacitance bridge.
• We declare that the material of product compliance with RoHS requirements.
ORDERING INFORMATION
Device Marking
Shipping
3000/Tape & Reel
24R
10000/Tape & Reel
24R
2SC3356RWT3G
S-2SC3356RWT3G
SC-70
1
3
2
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
2SC3356RWT1G
S-2SC3356RWT1G
www.jxndcn.com
JXND ELECTRONICS CO.,LTD
High Frequency Amplifier Transistor
2SC3356RWT1G，S-2SC3356RWT1G
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0
10
20
50
100
200
50
1 5 10 500.5
100 150
T
A
-Ambient Temperature-°C
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
-Total Power Dissipation-mWh
FE
-DC Current Gain
V
CE
= 10 V
0
5
10
15
0.5 1 5 10 50 70
I
C
-Collector Current-mA
INSERTION GAIN vs.
COLLECTOR CURRENT
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 10 V
f = 1.0 GHz
0.3
0.5
1
2
0 0.5 1 2 5 10 20 30
V
CB
-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
re
-Feed-back Capacitance-pF
f = 1.0 MHz
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0 0.5 1.0 105.0 30
I
C
-Collector Current-mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
f
T
-Gain Bandwidth Product-MHz
V
CE
= 10 V
0
10
20
0.1 0.2 0.4 0.6 0.81.0 2
f-Frequency-GHz
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
G
max
-Maximum Gain-dB
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 10 V
I
C
= 20 mA
G
max
|S
21e
|
2
Free Air
www.jxndcn.com
JXND ELECTRONICS CO.,LTD
High Frequency Amplif
ier Transistor
2SC3356RWT1G，S-2SC3356RWT1G