HMS10N50/HMS10N50F
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using H&M Semi’s
Advanced Super-Junction technology.
This advanced technology has been especially tailored
to minimize conduction loss, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices are well suited for AC/DC power conversion
in switching mode operation for higher efficiency.
Features
- 10A, 500V, R
DS(on) typ.
= 0.4Ω@V
GS
= 10 V
- Low gate charge ( typical 25nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Symbol Parameter HMS10N50/HMS10N50F Units
V
DSS
Drain-Source Voltage 500 V
I
D
Drain Current - Continuous (T
C
= 25
℃
)
10* A
- Continuous (T
C
= 100℃)
7* A
I
DM
Drain Current - Pulsed
(Note 1)
30 A
V
GSS
Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy
(Note 2)
86 mJ
I
AR
Avalanche Current
(Note 1)
1.7 A
E
AR
Repetitive Avalanche Energy
(Note 1)
43 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25
℃
)
57 W
- Derate above 25
℃
0.45 W/
℃
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150
℃
T
L
Maximum lead temperature for soldering purposes,
300
℃
1/8" from case for 5 seconds
Thermal Characteristics
Symbol Parameter HMS10N50/HMS10N50F Units
R
θJC
Thermal Resistance, Junction-to-Case 2.2
℃
/W
R
θJS
Thermal Resistance, Case-to-Sink Typ. 0.5
℃
/W
R
θJA
Thermal Resistance, Junction-to-Ambient 62
℃
/W
* Drain current limited by maximum junction temperature.
HMS10N50/HMS10N50F
S
D
G
GDS GDS
TO-220 TO-220F
Electrical Characteristics T
C
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 uA, T
J
=25
℃
500 -- -- V
V
GS
= 0 V, I
D
= 250 uA, T
J
=150
℃
-- 550 -- V
△
BV
DSS
/
△
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 uA, Referenced to 25℃
-- 0.6 -- V/
℃
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 500 V, V
GS
= 0 V
-- -- 1 uA
V
DS
= 480 V, T
C
= 125
℃
-- -- 10 uA
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30 V, V
DS
= 0 V
-- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30 V, V
DS
= 0 V
-- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 uA
2.5 4.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 3.5 A
-- 0.4 Ω
g
FS
Forward Transconductance
V
DS
= 40 V, I
D
= 3.5 A
(Note 4)
-- 16 -- S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 360 -- pF
C
oss
Output Capacitance -- 25 -- pF
C
rss
Reverse Transfer Capacitance -- 1.2 -- pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 400 V, I
D
= 3.5 A,
R
G
= 20 Ω
(Note 4, 5)
-- 25
-- ns
t
r
Turn-On Rise Time -- 55 -- ns
t
d(off)
Turn-Off Delay Time -- 70 -- ns
t
f
Turn-Off Fall Time -- 40 -- ns
Q
g
Total Gate Charge
V
DS
= 480 V, I
D
= 10 A,
V
GS
= 10 V
(Note 4, 5)
-- 8 -- nC
Q
gs
Gate-Source Charge -- 2.0 -- nC
Q
gd
Gate-Drain Charge -- 2.7 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 10 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 30 A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 10 A --
-- 1.5 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 10 A, --
190 -- ns
Q
rr
Reverse Recovery Charge
dI
F
/ dt = 100 A/us
(Note 4)
-- 2.3 -- uC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=60mH, I
AS
=1.7A, VDD=150V, Starting TJ=25 ℃
3. I
SD
≤7A, di/dt ≤ 200A/us, V
DD
≤ BV
DSS
, Starting TJ = 25 ℃
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
HMS10N50/HMS10N50F