HMS17N65D, HMS17N65, HMS17N65F
v1.0
V
DS
650
V
R
DS(ON) MAX
210 mΩ
I
D
1 A
Parameter Symbol
HMS17N65D
HMS17N65
HMS17N65F Unit
Drain-Source Voltage (VGS=0V）
V
DS
650
V
Gate-Source Voltage (VDS=0V)
V
GS
±30
V
Continuous Drain Current at Tc=25°C
I
D (DC)
17 17* A
Continuous Drain Current at Tc=100°C
I
D (DC)
12 12* A
Pulsed drain current
(Note 1)
I
DM (pluse)
51 51* A
Maximum Power Dissipation(
T
c
=
25
℃
)
Derate above 25°C
P
D
145
1.16
33.5
0.268
W
W/
°C
Single pulse avalanche energy
(Note 2)
E
AS
370
mJ
Avalanche current
(Note 1)
I
AR
7.5
A
Repetitive Avalanche energy ，t
AR
limited by T
jmax
(Note 1)
E
AR
0.8
mJ
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent R
DS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device Device Package Marking
HMS17N65D
TO
-263 HMS17N65D
HMS17N65
TO
-220 HMS17N65
HMS17N65F TO-220F HMS17N65F
Table 1. Absolute Maximum Ratings
(T
C
=25
℃
)
TO-263 TO-220 TO-220F
v1.0
Parameter
Symbol
HMS17N65D
HMS17N65
HMS17N65F
Unit
Drain Source voltage slope, V
DS
≤480 V,
dv/dt
50
V/ns
Reverse diode dv/dt，V
DS
≤480 V,I
SD
<I
D
dv/dt
15
V/ns
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55...+150 °C
* limited by maximum junction temperature
Table 2. Thermal Characteristic
Parameter
Symbol
HMS17N65D
HMS17N65
HMS17N65F
Unit
Thermal Resistance，Junction-to-Case（Maximum）
R
thJC
0.86 3.73 °C /W
Thermal Resistance，Junction-to-Ambient （Maximum）
R
thJA
62 80 °C /W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V I
D
=250μA 650
V
Zero Gate Voltage Drain Curr
ent(Tc=
25
℃
)
I
DS
S
V
DS
=650V,V
GS
=0V
1 μ
A
Zero Gate Voltage Drain Curr
ent(Tc=
125
℃
)
I
DS
S
V
DS
=650V,V
GS
=0V
100 μ
A
Gate-Body Leakage Current
I
GSS
V
GS
=±30V,V
DS
=0V
±100 n
A
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=250μA 2.0 4.0
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=8A
185 210 mΩ
Dynamic Characteristics
Forward Transconductance
g
FS
V
DS
= 20V, I
D
= 8A
11
S
Input Capacitance
C
lss
1360
pF
Output Capacitance
C
oss
115
pF
Reverse Transfer Capacitance
C
rss
V
DS
=50V,V
GS
=0V,
F=1.0MHz
4.8
pF
Total Gate Charge
Q
g
29 45 nC
Gate-Source Charge
Q
gs
6.5
nC
Gate-Drain Charge
Q
gd
V
DS
=480V,I
D
=17A,
V
GS
=10V
12
nC
Intrinsic gate resistance R
G
f = 1 MHz open drain
10
Ω
Switching times
Turn-on Delay Time
t
d(on)
10
nS
Turn-on Rise Time
t
r
5
nS
Turn-Off Delay Time
t
d(o
ff
)
55 75 nS
Turn-Off Fall Time
t
f
V
DD
=380V,I
D
=8A,
R
G
=5.5Ω,V
GS
=10V
4.5 10 nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
I
SD
17
A
Pulsed Source-drain current(Body Diode)
I
SDM
T
C
=
25°C
45
A
Forward On Voltage
V
SD
Tj=25°C,I
SD
=8A,V
GS
=0V
0.9 1.2
V
Reverse Recovery Time
t
rr
270
nS
Reverse Recovery Charge
Q
rr
3.3
uC
Peak Reverse Recovery Current
I
rrm
Tj=25°C,I
F
=8A,di/dt=100A/μs
24
A
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, R
G
=25Ω
HMS17N65D, HMS17N65, HMS17N65F