BZT52C5V1H
ZENER DIODE
FEA
TURES
z
Planar Die Construction
z
General purpose, Medium current
z
Ideally suited for automated assembly processes
z
Available in Lead free version
MARKING: H8
MAXIMUM RATINGS(Operating temperature r
ange applies unless otherwise specified)
Symbol Parameter Value Unit
P
D
Power Dissipation(Note 1) 500 mW
R
ΘJA
Thermal Resist
ance from Junction to Ambient 250
℃/W
Operation Junction and Storage Temperature Range
℃
T
J
,T
stg
-55~+150
ELECTRICAL CHARACTERISTICS(T
a
=25
℃
unless otherwise specified)
Parameter Symbol Test conditions
Min Typ Max Unit
Zener Voltage Range
(Note 2) V
Z
I
ZT
=5mA 5.1 5.5 V
Z
ZT
I
ZT
=5mA 50
Max
imum Zener Impedance(Note
3)
Z
Zk
I
ZK
=1mA 450
Ω
V
R
=2V 2 μA
Maximum Reverse Current (Not
e 2)
I
R
V
R
=4.2V
50 μA
Fo
rward Voltage (Not
e 2) V
F
I
F
= 10mA
0.9 V
2.Short durati
on test pulse used to minimi
ze self-heating effect.
3. f=1kH
Z
SOD-23
APPLICATION
z
Mobile Phone
Notes: 1.
Device mounted on a 1 in. ceramic PCB which spread 2 ounces of copper.
2
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
1
Rev. - 2.1
www.jscj-elec.com
The marking bar indicates the cathode
Soli
d
dot = Green molding compound device.
200 300 400 500 600 700 800 900 1000
0.1
1
10
100
012345
40
50
60
70
80
90
100
110
120
012345678910
0
20
40
60
80
100
Forward Characteristics
F
O
RW
ARD VOLTAGE
V
F
(m
V)
FORWARD CURRENT I
F
(mA)
T
a
=
2
5
℃
T
a
=
1
0
0
℃
T
a
=25
℃
f=1MHz
Capacitance C h
aracteristics
REVERSE VOLTAGE V
R
(V)
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
T
a
=2
5
℃
T
a
=
1
00
℃
Rev erse Characteris
tics
REVERSE VOLTAGE V
Z
(V)
REVERSE CURRENT I
Z
(mA)
ELECTRICAL CHARACTERISTICS
A,Jul,2012
0 25 50 75 100 125 150
0
20
40
60
80
100
120
Power Derating
Curve
PO
WER DISSIPATION -%
AMBIENT TEMPERATURE T
a
( )
℃
2
Rev. - 2.1
www.jscj-elec.com