- 1 -
ABSOLUTE MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
2N7002KT
60V N-Channel MOSFET
0.34A 60V；R
DS(ON)typ
=0.9Ω@10V，R
DS(ON)typ
=1.1Ω@4.5V
FEATURE
Trench Technology Power MOSFET
Low R
DS(ON)
Low Gate Charge
ESD Protected
Application
Load Switch
DC/DC Converter
MARKING:
SOT-523
Schematic diagram
Parameter
Symbol
Value
Unit
Drain - Source Voltage
V
DS
60
V
Gate - Source Voltage
V
GS
±20
V
T
A
= 25℃
I
D
0.34
A
Pulsed Drain Current
2
I
DM
1.0
A
T
A
= 25℃
P
D
0.25
W
Thermal Resistance from Junction to Ambient
5
R
θJA
500
℃/W
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-55~ +150
℃
2N7002KT
Version2.0 www.perfectway.cn
- 2 -
MOSFET ELECTRICAL CHARACTERISTICS(T
a
=25℃ unless otherwise noted)
Notes:
1. The maximum current rating is limited by package.
2. Pulse Test : Pulse Width ≤ 10μs, duty cycle ≤ 1%.
3. Pulse Test : Pulse Width ≤ 300μs, duty cycle ≤ 2%.
4. The power dissipation PD is limited by TJ(MAX) = 150°C.
5. Device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
Parameter
Symbol
Test Condition
Min
Type
Max
Unit
Off CHARACTERISTICS
Drain - Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
60
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 48V, V
GS
= 0V
1
µA
Gate - Body Leakage Current
I
GSS
V
GS
= ±20V, V
DS
= 0V
±5
uA
ON CHARACTERISTICS
3
Gate Threshold Voltage
V
GS(th)
V
DS
= VGS, I
D
= 250µA
1
1.5
2.5
V
Drain-source On-resistance
R
DS(on)
V
GS
= 10V, I
D
= 0.3A
0.9
2.5
Ω
V
GS
= 4.5V, I
D
= 0.2A
1.1
3
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
V
DS
= 30V, V
GS
= 0V, f = 1MHz
23.7
pF
Output Capacitance
C
oss
5.3
Reverse Transfer Capacitance
C
rss
2.5
Gate Resistance
R
g
V
DS
= 0V, V
GS
= 0V, f = 1MHz
160
Ω
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
g
V
DS
= 30V, V
GS
= 10V, I
D
= 0.3A
0.29
nC
Gate-source Charge
Q
gs
0.23
Gate-drain Charge
Q
gd
0.12
Turn-on Delay Time
t
d(on)
V
DD
= 30V, V
GS
= 10V,
R
L
= 100Ω, R
G
= 3Ω
3.5
ns
Turn-on Rise Time
t
r
3.2
Turn-off Delay Ttime
t
d(off)
12
Turn-off Fall Time
t
f
10
SOURCE-DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
3
V
SD
V
GS
= 0V, I
S
= 0.3A
1.2
V