- 1 -
ABSOLUTE MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
2N7002KL
60V N-Channel MOSFET
340mA 60V；R
DS(ON)typ
=1.9Ω@10V，R
DS(ON)typ
=2.3Ω@4.5V
FEATURE
High density cell design for Low RDS(on)
Voltage controlled small signal switch
Rugged and reliable
ESD protected Gate HBM 2.5KV
Application
DC/DC Converter
Load Switch for Portable Devices
Battery Switch
MARKING:
72K
L
=Device code
Solid dot = Green molding compound
device,if none,the normal device.
SOT-23
Schematic diagram
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
±20
V
Continuous Drain Current
I
D
340
mA
Power Dissipation
P
D
0.35
W
Thermal Resistance from Junction to Ambient
R
θJA
357
℃/W
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-55~ +150
℃
2N7002KL
Version1.0 www.perfectway.cn
- 2 -
MOSFET ELECTRICAL CHARACTERISTICS(T
a
=25℃ unless otherwise noted)
Notes:
*Pulse Test: Pulse Width ≤300μsˈ Duty Cycle ≤2%.
**These parameters have no way to verfy.
Parameter
Symbol
Test Condition
Min
Type
Max
Unit
Static Characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
= 0V, I
D
=250µA
60
V
Zero gate voltage drain current
I
DSS
V
DS
=48V,V
GS
= 0V
1
µA
Gate-body leakage current
I
GSS1
V
GS
=±20V, V
DS
= 0V
±10
µA
I
GSS2
V
GS
=±10V, V
DS
= 0V
±200
nA
I
GSS2
V
GS
=±5V, V
DS
= 0V
±100
nA
Gate threshold voltage*
V
GS(th)
V
DS
=V
GS
, I
D
=250µA
1.0
1.6
2.5
V
Drain-source on-resistance*
R
DS(on)
V
GS
=10V, I
D
=500mA
1.9
2.5
Ω
V
GS
=4.5V, I
D
=200mA
2.3
4
Recovered charge
Qr
V
GS
=0V,I
S
=300mA,V
R
=25V,
dls/dt=-100A/μS
30
nC
Dynamic characteristics**
Input Capacitance
C
iss
V
DS
=10V,V
GS
=0V,f=1MHz
40
pF
Output Capacitance
C
oss
30
Reverse Transfer Capacitance
C
rss
10
Switching characteristics**
Turn-on delay time
t
d(on)
V
GS
=10V,V
DD
=50V,R
G
=50Ω,
R
GS
=50Ω,R
L
=250Ω
10
ns
Turn-off delay time
t
d(off)
15
Reverse recovery Time
t
rr
V
GS
=0V,I
S
=300mA,V
R
=25V,
dls/dt=-100A/μS
30
Source-Drain Diode characteristics
Diode Forward voltage
V
SD
I
S
=300mA, V
GS
= 0V
1.5
V
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage
BV
GSO
IGS=±1mA(Open Drain)
±21.5
±30
V