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7N65F
7 Amps,650 Volts N-CHANNEL Power MOSFET
FEATURE
7A,650V,R
DS(ON)MAX
=1.4Ω@V
GS
=10V/3.5A
Low gate charge
Low C
iss
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-220F-3L
Absolute Maximum Ratings(T
C
=25℃,unless otherwise noted)
Parameter
Symbol
7N65F
Drain-Source Voltage
V
DSS
650
Gate-Source Voltage
V
GS
±30
Continuous Drain Current
I
D
7
Pulsed Drain Current(Note1)
I
DM
28
Single Pulse Avalanche Energy (Note 2)
E
AS
340
Reverse Diode dV/dt (Note 3)
dv/dt
5
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55to+150
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
260
Parameter
Symbol
7N65F
Units
Thermal resistance , Channel to Case
R
th(ch-c)
3.55
℃/W
Maximum Power Dissipation
T
C
=25℃
P
D
35
W
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Electrical Characteristics (T
c
=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V,I
D
=250uA
650
－
－
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=650V,V
GS
=0V
－
－
1
uA
Gate-Body Leakage Current,Forward
I
GSSF
V
GS
=30V,V
DS
=0V
－
－
100
nA
Gate-Body Leakage Current,Reverse
I
GSSR
V
GS
=-30V,V
DS
=0V
－
－
-100
nA
On Characteristics
Gate-Source Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
2.0
－
4.0
V
Drain-Source On-State Resistance
R
DS(on)
V
GS
=10V,I
D
=3.5A
－
1.1
1.4
Ω
Dynamic Characteristics
Input Capacitance
C
iss
V
DS
=25V,V
GS
=0V,
f=1.0MHZ
－
1205
－
pF
Output Capacitance
C
oss
－
80
－
pF
Reverse Transfer Capacitance
C
rss
－
23
－
pF
Switching Characteristics
Turn-On Delay Time
t
d(on)
V
DD
=325V,I
D
=7A,
R
G
=10Ω
－
15.6
－
ns
Turn-On Rise Time
t
r
－
1.6
－
ns
Turn-Off Delay Time
t
d(off)
－
35.6
－
ns
Turn-Off Fall Time
t
f
－
23.6
－
ns
Total Gate Charge
Qg
V
DS
=520V,I
D
=7A,
V
GS
=10V
－
22.1
－
nC
Gate-Source Charge
Qgs
－
5.8
－
nC
Gate-Drain Charge
Qgd
－
5.4
－
nC
Drain-Source Body Diode Characteristics and Maximum Ratings
Diode Forward Voltage
V
SD
I
S
=7A,V
GS
=0V
－
－
1.5
V
Reverse Recovery Time
t
rr
V
DS
=30V,I
S
=1A,
dI
F
/dt=100A/us,(Note3)
－
382
－
ns
Reverse Recovery Charge
Q
rr
－
1980
－
nC
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. V
DD
=50V,L=10mH,R
g
=25Ω, starling T
J
=25℃.
3. Pulse width≤300us;duty cycle≤2%.