SCHOTTKY BARRIER DIODE
Trustworthy electronic circuit protection expert SOD123FL
1
DS22 thru DS220 SOD-123FL
SCHOTTKY BARRIER DIODE
Features
●Metal silicon junction, majority carrier conduction
●For surface mounted applications
●Low power loss, high efficiency
●High forward surge current capability
●For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Mechanical Data
Case: SOD-123FL
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight:15mg/0.00048oz
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols
DS22
DS24
DS26
DS28
DS210
DS212
DS220
Units
Maximum Repetitive Peak Reverse
Voltage
V
RRM
20
40
60
80
100
120
200
V
Maximum RMS voltage
V
RMS
14
28
42
56
70
84
140
V
Maximum DC Blocking Voltage
V
DC
20
40
60
80
100
120
200
V
Maximum Average Forward Rectified
Current
I
F(AV)
2
A
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
I
FSM
50
A
Max Instantaneous Forward Voltage at
2 A
V
F
0.55
0.70
0.85
0.95
V
Maximum DC Reverse Current Ta=25℃
at Rated DC Reverse Voltage Ta=100℃
I
R
0.5
5
0.3
3
mA
Typical Junction Capacitance
1
C
j
220
80
pF
Typical Thermal Resistance
2
R
θJA
85
℃/W
Operating Junction Temperature Range
T
j
-55 ~ +125
℃
Storage Temperature Range
T
stg
-55 ~ +150
℃
1. Measured at 1 MHz and applied reverse voltage of 4 V D.C
2. P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
1. Cathode
2. Anode
SCHOTTKY BARRIER DIODE
Trustworthy electronic circuit protection expert SOD123FL
2
Fig.1 Forward Current Derating Curve
Fig.5 Maximum Non-Repetitive Peak Forward
Surge Current
Fig.4Typical Junction Capacitance
Fig.3 Typical Forward Characteristic
Fig.2 Typical Reverse Characteristics
Fig.1 Forward Current Derating Curve