ESD Protection Diode
Trustworthy electronic circuit protection expert ESD8V0D3B
1
www.yint.com.cn VRE 5.0
ESD8V0D3B
Description
ESD8V0D3B is designed to protect voltage sensitive
components from ESD and transient voltage events. Excellent
clamping capability, low leakage, and fast response time, make
these parts ideal for ESD protection on designs where board
space is at a premium. Because of its small size, it is suited for
use in cellular phones, MP3 players, digital cameras and many
other portable applications where board space is at a premium
Features
●Ultra low leakage: nA level
●Operating voltage: 8V
●Package: SOD-323
●Low clamping voltage
●Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test
Air discharge: ±15kV
Contact discharge: ±8kV
– IEC61000-4-4 (EFT) 40A (5/50ns)
– IEC61000-4-5 (Lightning) 12A (8/20μs)
Functional Diagram
Applications
●Cell Phone Handsets and Accessories
●Microprocessor based equipment
●Personal Digital Assistants (PDA’s)
●Notebooks, Desktops, and Servers
●Portable Instrumentation
●Peripherals
●Pagers
Absolute Maximum Ratings(Tamb=25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Peak Pulse Power (8/20µs)
P
PP
320
Watts
ESD per IEC 61000−4−2 (Air)
V
ESD
±15
KV
ESD per IEC 61000−4−2 (Contact)
±8
KV
Lead Soldering Temperature
T
L
260 (10 sec)
°C
Operating Temperature Range
T
J
-55 to +150
°C
Storage Temperature Range
T
STJ
-55 to +150
°C
ESD Protection Diode
Trustworthy electronic circuit protection expert ESD8V0D3B
2
www.yint.com.cn VRE 5.0
Electrical Characteristics (TA = 25 °C unless otherwise noted)
Characteristics Curves
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Reverse Stand-off Voltage
V
RWM
8
V
Reverse Breakdown Voltage
V
BR
I
t
= 1mA
8.5
V
Reverse Leakage Current
I
R
V
R
=
V
RWM
5
μA
Clamping Voltage
V
C
I
PP
=1A, t
P
= 8/20μs
13.4
V
I
PP
=18A, t
P
= 8/20μs
20
V
Junction Capacitance
C
J
V
R
=0V, f = 1MHz
120
pF
Figure 1- Power Derating Curve
Figure 2- ESD Pulse Waveform
(according to IEC 61000-4-2)
Figure3- 8/20µs Pulse Waveform