LKB40N120TM2
Version 1.3,Feb-2020
1
www.lonten.cc
Lonten 1200V, 40A, Field Stop Trench IGBT
Description
LKB40N120TM2 IGBT is obtained by novel field
stop IGBT technology, which
provides the best
compromise between switching and conduction
losses.
Features
maximum junction temperature: T
vj
=175
°C
Low V
CEsat
with fast recovery anti-parallel diode
RoHS product
Applications
Uninterruptible power supply
Welding machines
Product Summary
V
CES
1200V
I
C
40A
V
CEsat
@ T
vj
=25°C 1.7V
Pin Configuration
Pb
LKB40N120TM2
Version 1.3,Feb-2020
2
www.lonten.cc
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter Voltage
V
CE
1200
V
DC collector current, limited by T
vjmax
T
C
= 25°C
T
C
= 100°C
I
C
80
40
A
Pulsed collector current , t
p
limited by T
vjmax
I
Cpuls
160
A
Diode forward current, limited by T
vjmax
T
C
= 25°C
T
C
= 100°C
I
F
40
20
A
Diode pulsed current, t
p
limited by T
vjmax
I
Fpuls
160
A
Gate-emitter voltage
V
GE
±20
V
Short circuit withstand time
V
GE
= 15.0V, V
CC
≤ 600V
Allowed number of short circuits < 1000
Time between short circuits: ≥1.0s
T
vj
= 175°C
t
SC
10
μs
Power dissipation (T
C
= 25°C）
Power dissipation (T
C
= 100°C）
P
tot
428
214
W
Operating junction temperature
T
vj
-55 to +175
°C
Storage temperature
T
stg
-55 to +150
°C
Thermal Characteristics
Parameter
Symbol
Value
Unit
IGBT thermal resistance, junction-to-case
R
θJC
0.35
K/W
Diode thermal resistance, junction-to-case
R
θJC
1.2
K/W
Thermal resistance, junction-to-ambient
R
θJA
45
K/W
Package Marking and Ordering Information
Device
Device Package
Marking
LKB40N120TM2
TO-247-3L
LKB40N120TM2