Rev1.0 Jan. 2023
1Mb ~ 16Mb SPI MRAM
Netsol Corporation Proprietary
1Mb ~ 16Mb SPI MRAM
Single/ Dual/ Quad IO SPI MRAM
3.3V/1.8V
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S3A1004V0M
S3A2004V0M
S3A4004V0M
S3A8004V0M
S3A1604V0M
1
S3A1004R0M
S3A2004R0M
S3A4004R0M
S3A8004R0M
S3A1604R0M
Revision 1.0
Rev1.0 Jan. 2023
1Mb ~ 16Mb SPI MRAM
Netsol Corporation Proprietary
Supports Serial Peripheral Interface with Mode 0
and Mode 3
- Single SPI (1-1-1, 1-1-2, 1-2-2, 1-1-4, 1-4-4)
- Dual SPI (2-2-2)
- Quad SPI (4-4-4)
Operating Frequency
- Single Data Rates (SDR) : 108MHz
- Double Data Rates (DDR) : 54MHz
Supports XIP for read and write operations
Fast write time and single byte writable
Data protection
- WP pin write protection
- Block lock protection
Nonvolatile status and configuration registers
Identification
- 64-bit unique ID
- 64-bit serial number - user writable
Augmented 256-byte nonvolatile-area
- Read and write with user-protection
Deep power down for low-power
Supports JEDEC reset
Feature
Memory cell : STT-MRAM
Density
- 16Mb, 8Mb, 4Mb, 2Mb and 1Mb
Data Integrity : No external ECC required
Data Endurance
- Unlimited read cycle
- 10
14
write cycles
Data Retention
- 10 years at 85°C
Single Power Supply Operation
- S3Axx04V0M: 2.70V~3.60V
- S3Axx04R0M: 1.71V~1.98V
Operating Temperature Range
- Commercial Temperature : 0°C to 70°C
- Industrial Temperature : -40°C to 85°C
RoHS compliant packages
- 8pad WSON (5.0mm x 6.0mm)
- 8pin SOIC (150mil)
Operation
Typical Values
Units
1.8V(S3Axx04R0M) 3.3V(S3Axx04V0M)
Frequency(SDR)
108 (Max.) MHz
Frequency(DDR)
54 (Max.) MHz
Standby Current
280 330
µA
Deep Power Down Current
25 80
µA
Active Read Current (4
-4-4) SDR @108MHz
8 11
mA
Active Write Current (4
-4-4) SDR @108MHz
21 24
mA
Performance
2