Product Summary
Value Unit
100 V
1.8 V
114 A
6.5
m
8.1
m
Package # of Pins Marking MSL
T
J
(°C)
Media Quantity (pcs)
TO-220-3L 3 SL1008A N/A -55 to 150 Tube 50
TO-263-3L 3 SL1008A 1 -55 to 150 13-inch Reel 1000
Symbol Unit
V
DS
V
V
GS
V
I
DM
A
I
AS
A
E
AS
mJ
T
J
, T
STG
°C
Pulsed Drain Current
(2)
360
Continuous Drain
Current
(1)
T
C
= 25°C
I
D
114
T
C
= 100°C
72
W
T
C
= 100°C
77
Avalanche Current
(3)
42
Avalanche Energy
(3)
88
Junction & Storage Temperature Range -55 to 150
Power Dissipation
(4)
T
C
= 25°C
P
D
192
A
Drain-to-Source Voltage 100
Gate-to-Source Voltage ±20
I
D
(@ V
GS
= 10V)
(1)
R
DS(ON)_Typ
(@ V
GS
= 10V)
Ordering Information
Device
R
DS(ON)_Typ
(@ V
GS
= 4.5V)
JMSL1008AC
JMSL1008AE
100V 6.5m N-Ch Power MOSFET
Parameter
V
DS
V
GS(th)_Typ
JMSL1008AC-U
Value
Absolute Maximum Ratings
(@ T
A
= 25°C unless otherwise specified)
Parameter
JMSL1008AE-13
• Ultra-low R
DS(ON)
• Low Gate Charge
• 100% UIS Tested, 100% R
g
Tested
• Pb-free Lead Plating
• Halogen-free and RoHS-compliant
0
6
12
18
24
30
03691215
R
DS(ON)
(m)
V
GS
(V)
0
2
4
6
8
10
0 8 16 24 32 40
V
GS
(V)
Q
g
(nC)
R
DS
(
ON
)
vs. V
GS
Gate Charge
V
DS
= 50V
I
D
= 20A
• Power Managerment in Telecom., Industrial Automation, CE
• Current Switching in DC/DC & AC/DC (SR) Sub-systems
• Motor Driving in Power Tool, E-vehicle, Robotics
I
D
= 20A
G
D
S
TO-263-3L Top View
TO-220-3L Top View
G
S
D
G
S
D
Features
Applications
Rev. 2.4
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Page 1 of 5
Symbol Min. Typ. Max. Unit
V
(BR)DSS
100 V
V
DS
= 80V, V
GS
= 0V
1.0
T
J
=
55°C
5.0
I
GSS
±100 nA
Gate Threshold Voltage
V
GS(th)
1.2 1.8 2.5 V
6.5 7.8
m
8.1 10.2
m
g
FS
82 S
V
SD
0.71 1.0 V
I
S
192 A
C
iss
2360 pF
C
oss
368 pF
C
rss
5.9 pF
R
g
1.7
Q
g
34 nC
Q
g
16.8 nC
Q
gs
5.4 nC
Q
gd
5.7 nC
t
D(on)
8.4 ns
t
r
12.2 ns
t
D(off)
43 ns
t
f
18.9 ns
t
rr
49 ns
Q
rr
43 nC
Symbol Unit
R
JA
°C/W
R
JC
°C/W
Notes:
1. Computed continuous current assumes the condition of T
J_Max
while the actual continuous current depends on the thermal & electro-mechanical
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Typ.
Thermal Performance
Max.
55
0.65
45
0.55
2. This single-pulse measurement was taken under T
J_Max
= 150°C.
3. This single-pulse measurement was taken under the following condition [L = 100H, V
GS
= 10V, V
DS
= 50V] while its value is limited by
4. The power dissipation P
D
is based on T
J_Max
= 150°C.
5. This value is guaranteed by design hence it is not included in the production test.
T
J_Max
= 150°C.
application board design.
Gate Resistance
V
GS
= 0V, V
DS
= 0V, f = 1MHz
Total Gate Charge (@V
GS
= 10V)
V
GS
= 0 to 10V
V
DS
= 50V, I
D
= 20A
Total Gate Charge (@V
GS
= 4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
= 10V, V
DS
= 50V
R
L
= 2.5
,
R
GEN
= 6
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
I
F
= 15A, dI
F
/dt = 100A
/
s
Parameter
SWITCHING PARAMETERS
(5)
T
C
= 25°C
Input Capacitance
V
GS
= 0V, V
DS
= 50V, f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
DYNAMIC PARAMETERS
(5)
V
GS
= 4.5V, I
D
= 15A
Static Drain-Source ON-Resistance
R
DS(ON)
JMSL1008AC
JMSL1008AE
Parameter Conditions
Drain-Source Breakdown Voltage
I
D
= 250A, V
GS
= 0V
STATIC PARAMETERS
Electrical Characteristics
(@ T
J
= 25°C unless otherwise specified)
A
Gate-Body Leakage Current
V
DS
= 0V, V
GS
= ±20V
Body Diode Reverse Recovery Time
I
F
= 15A, dI
F
/dt = 100A
/
s
Body Diode Reverse Recovery Charge
Zero Gate Voltage Drain Current
I
DSS
V
DS
= V
GS
, I
D
= 250A
Diode Continuous Current
V
GS
= 10V, I
D
= 20A
Forward Transconductance
V
DS
= 5V, I
D
= 20A
Diode Forward Voltage
I
S
= 1A, V
GS
= 0V
Rev. 2.4
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Page 2 of 5