N-Channel Enhancement Mode Field Effect Transistor
Product Summary
60V
100mA
＜8.0 Ω
● V
DS
● I
D
● R
DS(ON)
( at V
GS
=10V)
● R
DS(ON)
( at V
GS
=4.5V)
＜13.0 Ω
● ESD Protected Up to 2.0KV (HBM)
General Description
● Trench Power LV MOSFET technology
● High Power and current handing capability
Applications
● Load/Power Switching
● Interfacing Switching
● Logic Level Shift
■
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage V
DS
60 V
Gate-source Voltage V
GS
±20 V
Drain Current I
D
mA
100
Pulsed Drain Current
A
I
DM
1.5 A
Total Power Dissipation @ T
A
=25℃
P
D
0.15 W
Thermal Resistance Junction-to-Ambient @ Steady State R
θJA
357 ℃/ W
Junction and Storage Temperature Range T
J
,T
STG
-55～+150 ℃
SOT-523
2N7002KT
1
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■
Electrical Characteristics (T
J
=25℃ unless otherwise noted)
Parameter
Symbol
Conditions Min Typ Max Units
Static Parameter
Drain-Source Breakdown Voltage BV
DSS
V
GS
= 0V, I
D
=250μA 60 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=60V,V
GS
=0V 1 μA
Gate-Body Leakage Current I
GSS
V
GS
= ±20V, V
DS
=0V
±10 μA
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
=250μA 0.8 1.5 2.2 V
Static Drain-Source On-Resistance R
DS(ON)
V
GS
= 10V, I
D
=100mA 2.5 8.0
Ω
V
GS
= 4.5V, I
D
=10mA 3.0 13.0
Diode Forward Voltage
C
V
SD
I
S
=100mA,V
GS
=0V 1.2 V
Maximum Body-Diode Continuous Current I
S
100 mA
Dynamic Parameters
B
Input Capacitance C
iss
V
DS
=30V,V
GS
=0V,f=1MHZ
18
pF Output Capacitance C
oss
12
Reverse Transfer Capacitance C
rss
7
Switching Parameters
B
Total Gate Charge Q
g
V
GS
=10V,V
DS
=30V,I
D
=0.1A
1.7
nC Gate Source Charge Q
gs
0.19
Gate Drain Charge Q
gd
0.27
Turn-on Delay Time t
D(on)
V
GS
=10V,V
DD
=30V,R
G
=6Ω,I
D
=0.1A
5
ns
Turn-off Delay Time t
D(off)
17
A. Repetitive Rating: Pulse width limited by maximum junction temperature.
B. These parameters have no way to verify.
C. Pulse Test: Pulse Width≤300us, Duty Cycle≤0.5%.
2N7002KT
2
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