SiC Schottky Barrier Diode
*1 Limited by maximum T
vj
and for Max. R
thJC
. *2 T
c
=100°C, T
vj
=150°C, Duty cycle=10% *3 T
c
=25°C
Range of storage temperature
Surge non-
repetitive
forward current
PW=10ms sinusoidal, T
vj
=25°C
PW=10ms sinusoidal, T
vj
=150°C
Virtual junction temperature
Reverse voltage (repetitive peak)
Continuous forward current
lAbsolute maximum ratings (T
vj
=25°C unless otherwise specified)
Repetitive peak forward current
Basic ordering unit (pcs)
Silicon carbide epitaxial planar type
3) High-speed switching possible
lPackaging specifications
2) Reduced temperature dependence
4) High surge current capability
(1) Cathode
(2) Cathode
(3) Anode
(1)
(2) (3)
(3)
(2)
(1)
*
2
*
3
*
1
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TSZ22111・14・001
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TSQ50221-SCS308AH
9.Nov.2022 - Rev.003
Datasheet