SCS308AH
SiC Schottky Barrier Diode
*1 Limited by maximum T
vj
and for Max. R
thJC
. *2 T
c
=100°C, T
vj
=150°C, Duty cycle=10% *3 T
c
=25°C
A
16
-55 to +175
250
°C
175
A
2
s
A
2
s
°C
22
T
vj
57
Range of storage temperature
T
stg
i
2
dt
Surge non-
repetitive
forward current
PW=10ms sinusoidal, T
vj
=25°C
PW=10ms sinusoidal, T
vj
=150°C
PW=10ms square, T
vj
=25°C
i
2
t value
1<PW<10ms, T
vj
=25°C
Virtual junction temperature
1<PW<10ms, T
vj
=150°C
Reverse voltage (repetitive peak)
Reverse voltage (DC)
(T
c
=
135°C)
lAbsolute maximum ratings (T
vj
=25°C unless otherwise specified)
Unit
Value
Repetitive peak forward current
Total power disspation
V
R
I
F
I
FSM
I
FRM
P
D
650
650
8
36
57
67
A
A
V
RM
Tube
-
Type
Packaging
Reel size (mm)
C9
SCS308AH
Basic ordering unit (pcs)
Tape width (mm)
-
50
Marking
Packing code
lFeatures
21nC
1) Shorter recovery time
A
W
Symbol
lConstruction
Silicon carbide epitaxial planar type
Parameter
V
V
A
3) High-speed switching possible
lOutline
lInner circuit
lPackaging specifications
TO-220ACP
2) Reduced temperature dependence
4) High surge current capability
650V
8A
V
R
I
F
Q
C
(1) Cathode
(2) Cathode
(3) Anode
(1)
(2) (3)
(3)
(2)
(1)
*
2
*
3
*
1
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©2022 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
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TSQ50221-SCS308AH
9.Nov.2022 - Rev.003
Datasheet
SCS308AH
1.44
2.6
K/W
lThermal characteristics
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
R
thJC
-
-
1.8
Q
C
400
mJ
V
R
=650V,f=1MHz
-
V
R
=400V,di/dt=350A/ms
-
21
-
-
pF
36
-
ns
mA
V
R
=650V,T
vj
=25°C
V
0.024
1.50
I
F
=8A,T
vj
=175°C
V
R
=650V,T
vj
=175°C
V
40
-
-
-
1.35
-
-
mA
1.6
160
mA
-
4.8
I
F
=8A,T
vj
=150°C
-
650
lElectrical characteristics (T
vj
=25°C unless otherwise specified)
Unit
Max.
Min.
Values
-
-
1.50
V
1.71
V
-
-
-
V
DC
I
R
=40mA
Conditions
Typ.
I
F
=8A,T
vj
=25°C
pF
Symbol
V
F
lTypical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
15
nC
E
ava
-
110
-
L=1mH
t
C
V
R
=400V,di/dt=350A/ms
-
I
R
C
1.82×10
-3
Ws/K
R
th2
C
th2
R
th3
C
th3
R
th1
K/W
C
th1
1.89×10
-2
1.81×10
-1
1.55×10
0
1.95×10
-4
8.01×10
-4
V
R
=650V,T
vj
=150°C
V
R
=1V,f=1MHz
PD
T
j
T
c
T
a
R
th,n
R
th1
C
th1
C
th2
C
th,n
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©2022 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/5
TSQ50221-SCS308AH
9.Nov.2022 - Rev.003
Datasheet