www.jscj-elec.com AD-EMH9
Version 1.0
1
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6
2021-07-01
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
AD-EMH9 Digital Transistor (Built-in Resistors)
AD-EMH9 Dual Digital Transistor (NPN + NPN)
FEATURES
Two AD-DTC114Y* chips are built-in a package
Transistor elements are independent, eliminating interference
Mounting cost and area can be cut in half
AEC-Q101 qualified
MARKING :
H9
www.jscj-elec.com AD-EMH9
Version 1.0
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6
2021-07-01
MAXIMUM RATINGS (T
j
= 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Supply voltage
V
CC
50
V
Input voltage
V
IN
-6~40
V
Output current
I
O
70
mA
I
C(MAX)
100
Power dissipation
P
D
150
mW
Operating junction and storage temperature range
T
j
, T
stg
-55 ~ 150
°C
ELECTRICAL CHARACTERISTICS (T
j
= 25°C unless otherwise specified)
Parameter
Symbol
Test condition
Min
Typ
Max
Unit
Input voltage
V
I(OFF)
V
CC
= 5V, I
O
= 100μA
0.3
-
-
V
V
I(ON)
V
O
= 0.3V, I
O
= 1mA
-
-
1.4
V
Output voltage
V
O(ON)
I
O
/I
I
= 5mA/0.25mA
-
-
0.3
V
Input current
I
I
V
I
= 5V
-
-
0.88
mA
Output current
I
O(OFF)
V
CC
= 50V, V
I
= 0V
-
-
0.5
μA
DC current gain
G
I
V
O
= 5V, I
O
= 5mA
68
-
-
-
Input resistance
R
1
-
7
10
13
KΩ
Resistance ratio
R
2
/R
1
-
3.7
4.7
5.7
-
Transition frequency
F
T
V
CE
= 10V, f = 100MHz, I
E
= 5mA
-
250
-
MHz