www.jscj-elec.com AD-EMD10
Version 1.0
1
/
7
2021-07-01
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
AD-EMD10 Digital Transistor (Built-in Resistors)
AD-EMD10 Dual Digital Transistor (NPN + PNP)
FEATURES
AD-DTC123J* and AD-DTA123J* chips are built-in a package
Transistor elements are independent, eliminating interference
Mounting cost and area be cut in half
AEC-Q101 qualified
MARKING :
D10
www.jscj-elec.com AD-EMD10
Version 1.0
2
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7
2021-07-01
T
R1
MAXIMUM RATINGS (Tj = 25°C unless otherwise specified
)
Parameter
Symbol
Value
Unit
Supply voltage
V
CC
50
V
Input voltage
V
IN
-5~12
V
Output current
I
O
100
mA
I
C(MAX)
100
Power dissipation
P
D
150
mW
Operating junction and storage temperature range
T
j
, T
stg
-55 ~ 150
°C
T
R1
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Parameter
Symbol
Test condition
Min
Typ
Max
Unit
Input voltage
V
I(OFF)
V
CC
= 5V, I
O
= 100μA
0.5
-
-
V
V
I(ON)
V
O
= 0.3V, I
O
= 5mA
-
-
1.1
V
Output voltage
V
O(ON)
I
O
/I
I
= 5mA/0.25mA
-
0.1
0.3
V
Input current
I
I
V
I
= 5V
-
-
3.6
mA
Output current
I
O(OFF)
V
CC
= 50V, V
I
= 0V
-
-
0.5
μA
DC current gain
G
I
V
O
= 5V, I
O
= 10mA
80
-
-
-
Input resistance
R
1
-
1.54
2.2
2.86
KΩ
Resistance ratio
R
2
/R
1
-
17
21
26
-
Transition frequency
F
T
V
O
= 10V, f = 100MHz, I
O
= 5mA
-
250
-
MHz
T
R2
MAXIMUM RATINGS (Tj = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Supply voltage
V
CC
-50
V
Input voltage
V
IN
-12~5
V
Output current
I
O
-100
mA
I
C(MAX)
-100
Power dissipation
P
D
150
mW
Operating junction and storage temperature range
T
j
, T
stg
-55 ~ 150
°C
T
R2
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Parameter
Symbol
Test condition
Min
Typ
Max
Unit
Input voltage
V
I(OFF)
V
CC
= -5V, I
O
= -100μA
-0.5
-
-
V
V
I(ON)
V
O
= -0.3V, I
O
= -5mA
-
-
-1.1
V
Output voltage
V
O(ON)
I
O
/I
I
= -5mA/-0.25mA
-
-0.1
-0.3
V
Input current
I
I
V
I
= -5V
-
-
-3.6
mA
Output current
I
O(OFF)
V
CC
= -50V, V
I
= 0V
-
-
-0.5
μA
DC current gain
G
I
V
O
= -5V, I
O
= -10mA
80
-
-
-
Input resistance
R
1
-
1.54
2.2
2.86
KΩ
Resistance ratio
R
2
/R
1
-
17
21
26
-
Transition frequency
F
T
V
O
= -10V, f = 100MHz,
I
O
= -5mA
-
250
-
MHz