ASC300N1200MD3F
1
1200V SiC MOSFET Module
• AlSiC Baseplate and Aluminum Nitride
Insulator，Applicable to air cooling system
System Benefits
• Enables Compact, Lightweight, Efficient Systems
• Harsh Outdoor Environment Installation
• Mitigates Over-voltage Protection
• Reduced Thermal Requirements
• Reduced System Cost
Package 151mm x 103mm x 35.2mm
Part Number
Package
Marking
ASC300N1200MD3F
DWC3
ASC300N1200MD3F
Absolute Maximum Ratings (TC = 25℃ unless otherwise specified)
Symbol
Parameter
Value
Unit
V
DS
Drain-Source Voltage
1200
V
V
GS
Gate-Source Voltage(dynamic)
-10/+25
V
I
D
Drain Current
300
A
I
DM
Drain Current (pulsed)
600
A
P
D
Power Dissipation T
C
= 25°C
1154
W
T
C,
Tstg
Operating and Storage Temperature Range
-40 to +150
℃
T
J
Junction Temperature
175
℃
LStray
Stray Inductance
20
nH
Features
• High Temperature, Humidity, and Bias Operation
• Ultra Low Loss
• High-Frequency Operation
• Zero Turn-off Tail Current from MOSFET
• Normally-off, Fail-safe Device Operation
• Ease of Paralleling
ASC300N1200MD3F
2
Electrical Characteristic
s (TC = 25℃ unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
DS
Drain-source BreakdownVoltage
V
GS
=0V
1200
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=1200V, V
GS
=0V
300
uA
I
GSS
Gate-body Leakage Current
V
GS
=20V,V
DS
=0V
3
uA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS,
I
D
=30mA
2.0
4.0
V
R
DS(on)
Static Drain-source On Resistance
V
GS
=20V, I
D
=150A
5.7
7.3
mΩ
Ciss
Input Capacitance
VDS=800V，VGS=0V
f=1MHz
19.2
nF
Coss
Output Capacitance
0.73
Crss
Reverse Transfer Capacitance
45
pF
QGS
Gate-Source Charge
VDD=800V, VGS=-4/+20V
ID=150A,
230.1
nC
QGD
Gate-Drain Charge
234.9
QG
Total Gate Charge
714
td（on）
Turn-on delay time
VDD=800V,VGS=-4/+20V
ID=150A, RG(ext=1)
185
nS
tr
Rise Time
75
td(off)
Turn-off delay time
28
tf
Fall Time
26
Vsd
Diode Forward voltage
IF=180A, VGS=0V, T
J
=25C
6
V
Typical Performance-Reverse Diode(T J = 25 ℃ unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VFSD
Forward Voltage
V
GS
=0V，I
F
=200A,
T
J
=25℃
6
V
Is
Continuous Diode Forward Current
V
GS
=0V， T
J
=25℃
150
A
Is
pulse
Pulsed body diode current
300
A
trr
Reverse Recovery Time
V
GS
=-5V，I
F
=200A,
VR=800V，
di/dt=2.7k A/μs
T
J
=25℃
98
ns
Qrr
Reverse Recovery Time
306
nC
Irrm
Peak Reverse Recovery Current
39
A
Thermal Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
RJC
Thermal Resistance, Junction-to-Case
Tc=90℃，PD=150W
0.12
C/W
NTC-Thermistor
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
R
25
Ratedresistance
Tc=25℃
5.00
k
∆RR
Deviation of R100
TC = 100°C, R100 = 477
-5
5
%
B25/50
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
3380
k
B25/80
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
3468
k
B25/100
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
3523
k