www.jscj-elec.com AD-2N7002KDW
Version 1.0
1
/
6
2021-07-01
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
AD-2N7002KDW Plastic-Encapsulated MOSFET
AD-2N7002KDW Dual N-Channel MOSFET
V
(BR)DSS
R
DS(on),
Max
I
D
60V
2.5Ω @ 10V
340mA
3Ω @ 4.5V
FEATURES
High density cell design for low R
DS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
ESD protected
AEC-Q101 qualified
APPLICATIONS
Load switch for portable devices
DC/DC Converter
MARKING EQUIVALENT CIRCUIT
72K = Device code
www.jscj-elec.com AD-2N7002KDW
Version 1.0
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2021-07-01
MAXIMUM RATINGS (T
j
= 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain-source voltage
V
DS
60
V
Gate-source voltage
V
GS
±20
V
Continuous drain current
I
D
340
mA
Maximum power dissipation
P
D
0.15
W
Thermal resistance from junction to ambient
R
θJA
833
°C/W
Operating junction and storage temperature range
T
j
, T
stg
-55 ~ 150
°C
ELECTRICAL CHARACTERISTICS (T
j
= 25°C unless otherwise specified)
Parameter
Symbol
Test condition
Min
Typ
Max
Unit
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
60
-
-
V
Gate threshold voltage
V
GS(th)
1)
V
DS
= V
GS,
I
D
= 1mA
1
1.3
2.5
V
Zero gate voltage drain current
I
DSS
V
DS
= 48V, V
GS
= 0V
-
-
1
µA
Gate-body leakage current
I
GSS
V
GS
= ±20V, V
DS
= 0V
-
-
±10
µA
Gate-source breakdown voltage
BV
GSO
Igs = ±1mA (Open drain)
±21.5
-
±30
V
Drain-source on-state resistance
R
DS(on)
1)
V
GS
= 4.5V, I
D
= 200mA
-
1.1
3
Ω
V
GS
= 10V, I
D
= 500mA
-
0.9
2.5
Dynamic characteristics
2)
Input capacitance
C
iss
V
DS
= 10V, V
GS
= 0V, f = 1MHz
-
-
40
pF
Output capacitance
C
oss
-
-
30
Reverse transfer capacitance
C
rss
-
-
10
Switching parameters
Turn-on delay time
t
d(on)
V
GS
= 10V, V
DD
= 50V, R
G
= 50Ω,
R
L
= 250Ω
-
-
10
ns
Turn-off delay time
t
d(off)
-
-
15
Source-drain diode
Source-drain diode forward voltage
V
SD
1)
V
GS
= 0V, I
S
= 300mA
-
-
1.5
V
Recovered charge
Qr
V
GS
= 0V,I
S
= 300mA,V
R
= 25V,
dl
s
/dt = -100A/μs
-
30
-
nC
Reverse recovery time
trr
-
30
-
ns
1) Pulse Test : Pulse width≤300μs, duty cycle≤2%.
2) Guaranteed by design, not subject to production testing.