60V N-Channel Enhancement Mode MOSFET
60V/1 . 8 A, R
60V/ 1 ..5 A, R
1 54m
=1 35m
DESCRIPTION
FEATURE
DS(ON)
Ω (typ.)@VGS=1 0V
DS(ON)
=
Ω
(typ.)@VGS=4.5V
Super high design for extremely low R
DS(ON)
Exceptional on-resistance and Maximum DC
current capability
This is a Full RoHS compliance
SOT23-3 package design
APPLICATIONS
Power Management in Note Book
Portable Equipment
Battery Powered System
PIN CONFIGURATION
UniverChip
Semconductor
Confidential
The SL2308 is the N-Channel logic enhancement
mode power field effect transistor is produced using
high cell density advanced trench technology..
This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage application, and
low in-line power loss are needed in a very small
outline surface mount package.
SL2308
1
www.slkormicro.com
ABSOLUTE MAXIMUM RATINGS ( T
A
= 25
℃
Unless otherwise noted )
Symbol
Parameter
Typical
Unit
V
DSS
Drain-Source Voltage
60
V
V
GSS
Gate-Source Voltage
±20
V
I
D
Continuous Drain Current (TJ=150℃)
VGS-4.5V
1.8
A
I
DM
Pulsed Drain Current
10
A
I
S
Continuous Source Current (Diode Conduction)
1
A
P
D
Power Dissipation
TA=25℃
1.25
W
TA=75℃
T
J
Operation Junction Temperature
150
℃
T
STG
Storage Temperature Range
-55~+150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress rating only and functional device operation is not implied
THERMAL DATA
Symbol
Parameter
Min
Typ
Max
Unit
R
θJA
Thermal Resistance-Junction to Ambient
62.5
℃/W
UniverChip
Semconductor
125
0.8
SL2308
2
www.slkormicro.com