BRCS900N10SYM
Rev.B Sep.-2022 DATA SHEET
http://www.fsbrec.com 1 / 8
PDFN5×6A 塑封封装双 N 沟道场效应管
。
Dual N-CHANNEL MOSFET in a PDFN5×6A Plastic Package
.
Dual N-Ch
VDS(V)=100V
ID=13.7A
RDS(ON)<90mΩ(VGS=10V)
RDS(ON)<130mΩ(VGS=4.5V)
无卤产品。HF Product.
PWM 应用、负载开关、电源管理、LED 调光。
PWM Application,
Load Switch,
Power Management,
Dimming LED.
印章代码 / Marking
见印章说明。See Marking Instructions.
描述 / Descriptions
特征 / Features
用途 / Applications
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
BRCS900N10SYM
Rev.B Sep.-2022 DATA SHEET
http://www.fsbrec.com 2 / 8
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Drain-Source Voltage
V
DS
100 V
Continuous Drain Current
I
D
13.7 A
Pulsed Drain Current I
DM
48 A
Gate-Source Voltage V
GS
±20
V
Power Dissipation
P
D
(T
c
=25℃)
35.7 W
Avalanche energy(L=0.5mH) E
AS
2.7 mJ
Avalanche Current(L=0.5mH) I
AS
3.3 A
Junction and Storage Temperature Range
T
j,
T
stg
-55 to 150
℃
Maximum Junction-to-Ambient
t ≤ 10s
RθJA
32
℃/ W
Steady-State 62.5
Maximum Junction-to-Case Steady-State RθJC 3.5
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Drain-Source Breakdown Voltage BV
DSS
I
D
=250uA, V
GS
=0V 100 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=100, V
GS
=0V 1.0 uA
Gate-Body leakage current I
GSS
V
DS
=0V, V
GS
= ±20V
±100
nA
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
, I
D
=250uA 1 1.4 2.5 V
Static Drain-Source On-Resistance R
DS(ON)
V
GS
=10V, I
D
=20A 68 90
mΩ
V
GS
=4.5V, I
D
=10A 84 130
Diode Forward Voltage V
SD
I
S
=1A, V
GS
=0V 1.2 V
Input Capacitance C
iss
V
DS
=25V V
GS
=0V
f=1.0MHz
180
pF
Output Capacitance C
oss
105
Reverse Transfer Capacitance C
rss
15
Gate resistance R
g
V
GS
=0V V
DS
=0V
f=1MHz
1.5 Ω
Total Gate Charge Q
g(10V)
V
GS
=10V, V
DS
=50V,
I
D
=5A
6.5
nC
Total Gate Charge Q
g(4.5V)
3
Gate Source Charge Q
gs
1.5
Gate Drain Charge Q
gd
1.5
极限参数 / Absolute Maximum Ratings(T
a
=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)