安徽富信半导体科技有限公司
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO. , LTD.
ABS1-ABS10
Bridge Rectifier Diode 整流桥
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Features 特点
Glass passivated chip junction 玻璃钝化结
High surge current capability 高浪涌电流能力
Reflow Solder Temperature 220℃ 回流焊温度 220 度
Package 封装: ABS
■
Maximum Rating 最大额定值
(T
A
=
25℃ unless otherwise noted 如无特殊说明，温度为 25℃)
Characteristic
特性参数
Symbol
符号
ABS1
ABS2
ABS4
ABS6
ABS8
ABS10
Unit
单位
Peak Reverse Voltage
反向峰值电压
V
RRM
100
200
400
600
800
1000
V
DC Reverse Voltage
直流反向电压
V
R(DC)
100
200
400
600
800
1000
V
RMS Reverse Voltage
反向电压均方根值
V
R(RMS)
70
140
280
420
560
700
V
Forward Rectified Current
正向整流电流
I
F
1
A
Peak Surge Current
峰值浪涌电流
I
FSM
35
A
Thermal Resistance J-A
结到环境热阻
R
θJA
72
℃/W
Junction and Storage Temperature
结温和储藏温度
T
J
,T
stg
■Electrical Characteristics 电特性
(T
A
=25℃ unless otherwise noted 如无特殊说明，温度为 25℃)
Characteristic
特性参数
Symbol
符号
Min
最小值
Typ
典型值
Max
最大值
Unit
单位
Condition
条件
Forward Voltage 正向电压降
V
F
1.1
V
I
F
=1A
Reverse Current (T
A
=25
℃
)
反向漏电流
(T
A
=125
℃
)
I
R
5
100
uA
V
R
=V
RRM
Diode Capacitance
二极管电容
C
D
13
pF
V
R
=4V,f=1MHz
安徽富信半导体科技有限公司
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO. , LTD.
ABS1-ABS10
■Typical Characteristic Curve 典型特性曲线
Figure 1: Forward Current Derating Curve Figure 2: Peak Forward Surge Current
Figure 3:Instantaneous Forward Characteristics Figure 4: Reverse Leakage Characteristics
Figure 5: Junction Capacitance Characteristics