Electrical Characteristics (Tj=25°C unless otherwise specifed)
FIG1 FIG2
RMS on-state current versus case
temperature
Maximum power dissipation versus RMS
on-state current
Symbol
Parameter Test Conditions Value Unit
IDRM Repetitive Peak Off-State Current
Tj=25°C 20 uA
Tj=125°C 12 mA
IRRM Repetitive Peak Reverse Current
Tj=25°C 20 uA
Tj=125°C 12 mA
VTM Forward "on" voltage IT=80A, tp=380us,Tj=25°C ≤1.5 V
VGT Gate trigger voltage VD=12V ,RL=33Ω ≤1.3 V
di/dt
VD=2/3VDRM Gate Open
,
Tj=125
℃
I,II,III,IV
F=100Hz, IG=2xIGT, tr≤100ns 100 A/us
IGT Gate trigger current I,II,III VD=12V, RL=33Ω ≤50
mA
IH Holding current IT=100mA ≤100
VGD Gate non-trigger voltage
VD=VDRM, TJ=125°C,RL=3.3K
0.2 V
dv/dt
Critical-rate of rise of
commutation voltage
TJ=125°C, VD=2/3VDRM, Gate
open circuit
≥1500 V/us
Rth(j-c) Thermal resistance Junction to ase ITO-247(Ins) 0.3 °C/W
P(w)
0
20 40
60
80
100
0
75
I
T(RMS)
(A)
125
150
25
50
100
0
25 50
75
100
125
0
60
100
120
20
40
80
Tc
( )℃
T(RMS)
ITO-247(lns)
BTA100 Series
2
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