Transistors
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1
Diodes
SMD Type
Schottky Barrier Rectifier
SS52 ~ SS520
2.108
2.348
1
2
4.699
4.064
5.588
5.080
3.937
3.302
2.108
1.905
4.12
3.92
2.65
2.45
5.59
5.39
2.10
2.30
1.270
0.762
0.203
0.051
0.305
0.152
Recommended
Land Pattern
DO-214AA(SMB)
Unit: mm
Features
Metal-Semiconductor junction with gard ring
Epitaxial construction
Low forward voltage drop
High current capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Symbol
SS
52
SS
53
SS
54
SS
55
SS
56
SS
58
SS
510
SS
515
SS
520
Unit
V
RRM
20 30 40 50 60 80 100 150 200
V
RMS
14 21 28 35 42 56 70 105 140
V
DC
20 30 40 50 60 80 100 150 200
I
F(AV)
I
FSM
Max Instantaneous Forward Voltage at 5 A DC
V
F
V
T
J
= 25
T
J
= 100
Typical Junction Capacitance *1
C
j
pF
Typical thermal resistance *2
R
thJA
/W
T
j
T
stg
* 1 Measured at 1MHz and applied reverse voltage of 4 V D.C
* 2 Thermal resistance junction to ambient
60
20
1.0
5
0
053005
0.55 0.7 0.85 0.95
Maximum Averag
e Forward Rectified Current
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
A
5.0
100
Jun
ction Temperature
Storage Temperature
I
R
Maximum DC Reverse Current
at rated DC blocking voltage
150
-55 to 150
0.2
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
mA
V