1/5
-150V
I
D
-1A
BV
DSS
750mΩ
R
DS
(ON)
Main
Produc
t Characteristics
Features and Benefits
§
Advanced
MOSFET process
technology
§
Ideal
for high efficiency switched mode power supplies
§
Low on-resistance with low gate charge
§
Fast switching and reverse
body
recovery
150V P-Channel MOSFET
GSFR1501
Description
The GSF
R1501
utilizes the latest techniques to achieve high cell density and low on-resistance. These
features make this device extremely efficient and reliable for use in high efficiency switch mode power
supplies
and a wide variety of other applications.
Absolute Maximum
Ratings (T
C
=25°C unless otherwise specified)
S
Schematic Diagram
D
G
Symbol
VDS
VGS
IDM
RθJA
TJ
TSTG
Parameter Max. Unit
Drain-Source Voltage -150 V
Gate-Source Voltage V
Drain Current-Continuous (T
A
=25°C)
ID
-1
A
Drain Current-Continuous (T
A
=70°C) -0.8
Drain Current-Pulsed
1
-4 A
Power Dissipation (T
A
=25°C)
PD
1.56 W
Power Dissipation-Derate above 25°C 0.012 W/°C
Thermal Resistance, Junction-to-Ambient 80 °C/W
Storage Temperature Range -55 To +150 °C
Operating Junction Temperature Range -55 To +150 °C
±20
SOT-23-6L
D
S
G
D
D
D
Electrical Characteristics (T
J
=25°C unless otherwise specified)
2/5
Note:
1. Repetitive rating: Pulsed width limited by maximum junction temperature.
2. Pulse test: pulse width ! 300us, duty cycle !
2%.
3. Essentially independent of operating temperature.
Parameter Symbol Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage BVDSS V
GS
=0V, I
D
=-250uA -150 - - V
V
DS
=-150V, V
GS
=0V,
T
J
=25°C
- - -1 μA
V
DS
=-120V, V
GS
=0V,
T
J
=125°C
- - -10 μA
Gate-Source Leakage Current IGSS V
GS
=±20V, V
DS
=0V - - ±100 nA
V
GS
=-10V, I
D
=-1A - 650 750
V
GS
=-6V, I
D
=-0.5A - 700 950
Gate Threshold Voltage VGS(th) V
GS
=V
DS
, I
D
=-250uA -2 -3 -4 V
Forward Transconductance gfs V
DS
=-10V, I
S
=-1A - 2 - S
Total Gate Charge
2,3
Qg - 4.4 -
Gate-Source Charge
2,3
Qgs -
0.7
-
Gate-Drain Charge
2,3
Qgd - 1.5 -
Turn-On Delay Time
2,3
td(on) - 12.5 -
Rise Time
2,3
tr - 9 -
Turn-Off Delay Time
2,3
td(off) - 17 -
Fall Time
2,3
tf - 12 -
Input Capacitance Clss - 400 -
Output Capacitance Coss - 31 -
Reverse Transfer Capacitance Crss - 18 -
Gate Resistance Rg
V
GS
=0V, V
DS
=0V,
F=1MHz
- 30 - Ω
Continuous Source Current IS - - -1 A
Pulsed Source Current ISM - - -2 A
Diode Forward Voltage VSD
V
GS
=0V, I
S
=-1A,
T
J
=25°C
- - -1 V
V
G
=V
D
=0V,
Force Current
Dynamic and Switching Characteristics
On / Off Characteristics
Static Drain-Source On-Resistance RDS(ON) mΩ
Drain-Source Leakage Current IDSS
Drain-Source Diode Characteristics and Maximum Ratings
V
DS
=-75V, I
D
=-1A
V
GS
=10V
nC
V
DD
=-75V, R
G
=6Ω
V
GS
=-10V, I
D
=-1A
nS
V
DS
=-75V, V
GS
=0V,
F=1MHz
pF
150V P-Channel MOSFET
GSFR1501