MS30N100HGC1/C0
H1.04 Maspower
1
Features
V
DS
=1000V,I
D
=30A
R
DS(on)
<0.38Ω
avalanche tested and current rated
Fast intrinsic Rectifier
Applications
High power density
Easy to mount
Space savings
Absolute Ratings (Tc=25℃)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DSS
1000
V
Gate-Source Voltage
V
GSS
±30
V
Drain Current-continuous
I
D
30
A
Drain Current-pulse（1）
I
DM
120
A
Single Pulsed Avalanche Energy
（2）
E
AS
3500
mJ
Avalanche Current, Repetitive or
Non-Repetitive
I
AR
30
A
Maximum Power Dissipation
(TO-247plus)
PD
735
W
Maximum Power Dissipation
(TO-247)
PD
290
W
Operating and Storage
Temperature Range
T
J
,T
STG
-55~+150
℃
Electrical Characteristics(T
CASE
=25℃ unless otherwise specified)
Parameter
Symbol
Tests conditions
Min
Typ
Max
Units
Drain-Source Voltage
BV
DSS
I
D
=3mA,V
GS
=0V
1000
-
-
V
Zero Gate Voltage Drain
Current
I
DSS
V
DS
=V
DSS
,V
GS
=0V
-
-
50
μA
Gate-Body Leakage
Current
I
GSS
V
GS
=±30V，V
DS
=0V
-
-
±200
nA
MS30N100HGC1/C0
H1.04 Maspower
2
On-Characteristics
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=2.5mA
3.0
-
5.5
V
Static Drain-Source
On-Resistance（3）
R
DS(ON)
V
GS
=10V,I
D
=15A
-
0.28
0.38
Ω
Forward
Transconductance
g
fs
V
DS
=10V,I
D
=15A
20
30
-
S
Dynamic Characteristics
Input capacitance
C
iss
V
DS
=25V, V
GS
=0V,
f=1.0MHZ
-
1900
-
pF
Output capacitance
C
oss
-
250
-
pF
Reverse transfer
capacitance
C
rss
-
35
-
pF
Electrical Characteristics(T
CASE
=25℃ unless otherwise specified)
Parameter
Symbol
Tests conditions
Min
Typ
Max
Units
Switching-Characteristics
Turn-On delay time
t
d(on)
V
DS
=500V,I
D
=15A,
Rg=1Ω,V
GS
=10V
-
22
-
ns
Turn-On rise time
t
r
-
13
-
ns
Turn-Off delay time
t
d(Off)
-
61
-
ns
Turn-Off rise time
t
f
-
14
-
ns
Total Gate Charge
Q
g
V
DS
=500V,I
D
=15A,
V
GS
=10V
-
185
-
nC
Gate-Source charge
Q
gs
-
47
-
nC
Gate-Drain charge
Q
gd
-
79
-
nC
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous
Drain-Source Diode
Forward Curret
V
SD
V
GS
=0V,I
S
=15A
-
-
1.5
V
Diode Forward Current
I
S
TC=25℃
-
-
30
A
Reverse recovery time
Trr
I
S
=25A,
dI/dT=100A/μS
VR=1000V,VGS=0V
-
-
300
nS