SCT3040KR
N-channel SiC power MOSFET
I
D
*1
39
A
Continuous Drain current
T
c
= 100°C
T
c
= 25°C
I
D
*1
55
A
Virtual Junction temperature
T
vj
175
°C
Range of storage temperature
T
stg
-55 to +175
°C
Gate - Source surge voltage (t
surge
< 300ns)
V
GSS_surge
*3
-4 to +26
V
Recommended drive voltage
V
GS_op
*4
0 / +18
V
Pulsed Drain current (T
c
= 25°C)
I
D,pulse
*2
137
A
Gate - Source voltage (DC)
V
GSS
-4 to +22
V
Parameter
Symbol
Unit
Drain - Source Voltage
V
DSS
1200
V
Value
lAbsolute maximum ratings (T
vj
= 25°C unless otherwise specified)
・Solar inverters
・DC/DC converters
・Switch mode power supplies
Reel size (mm)
Tape width (mm)
・Induction heating
・Motor drives
5) Simple to drive
Packing
Tube
6) Pb-free lead plating ; RoHS compliant
lApplication
lInner circuit
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
lOutline
V
DSS
1200V
TO-247-4L
R
DS(on)
(Typ.)
40mΩ
I
D
*1
55A
P
D
262W
SCT3040KR
Marking
Please note Driver Source and Power Source are
not exchangeable. Their exchange might lead to
malfunction.
-
Basic ordering unit (pcs)
30
Taping code
C15
lPackaging specifications
-
(1) (2)(3)(4)
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©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
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TSQ50214-SCT3040KR
9.Nov.2022 - Rev.003
Datasheet
SCT3040KR
V
Ω
Gate input resistance
R
G
f = 1MHz, open drain
-
7
-
mΩ
T
vj
= 25°C
-
40
52
T
vj
= 150°C
-
68
-
Static Drain - Source
on - state resistance
R
DS(on)
*5
V
GS
= 18V, I
D
=
20A
nA
Gate - Source
leakage current
I
GSS-
V
GS
=
-4V,
V
DS
= 0V
-
-
Gate - Source
leakage current
I
GSS+
V
GS
=
+22V,
V
DS
= 0V
-
-100
nA
Gate threshold voltage
V
GS (th)
V
DS
= 10V, I
D
=
10mA
2.7
-
5.6
-
1
10
T
vj
= 150°C
-
2
-
-
100
Zero Gate voltage
Drain current
I
DSS
V
GS
= 0V, V
DS
=1200V
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
μA
T
vj
= 25°C
V
T
vj
= 25°C
1200
-
-
T
vj
= -55°C
1200
-
-
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
lElectrical characteristics (T
vj
= 25°C unless otherwise specified)
lThermal resistance
lTypical Transient Thermal Characteristics
Value
Symbol
Unit
R
th1
R
th2
Value
Unit
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case
R
thJC
-
0.44
0.57
K/W
K/W
Ws/K
R
th3
Symbol
C
th1
C
th2
C
th3
2.56×10
-2
1.39×10
-3
1.95×10
-1
1.00×10
-2
2.20×10
-1
3.57×10
-2
P
D
T
j
T
c
T
a
R
th,n
R
th1
C
th1
C
th2
C
th,n
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©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
2/15
TSQ50214-SCT3040KR
9.Nov.2022 - Rev.003
Datasheet