https://www.centralsemi.com/process-change-notices
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Page 1 of 3 R0
PCN #243
Final Notification Date:
December 8, 2022
Product / Process Change Notice
Devices affected:
Zener diode wafer process CPZ28X: wafers, bare die in chip form, and packaged devices.
Extent of change:
The CPZ28X wafer process has been discontinued and replaced with the CPZ58X and CPZ59X wafer
processes, as indicated below and in figures 1-3. Additionally, the wafer diameter is changing from 5”
to 6”, and the metallization is also being enhanced.
New Wafer Process
Affected Items
Example
CPZ58X
*Items with nominal Zener
voltages of 2.4V to 15V
Old: CPZ28X-BZX55C2V4-CM
New: CPZ58X-BZX55C2V4-CM
CPZ59X
*Items with nominal Zener
voltages of 16V to 75V
Old: CPZ28X-CMPZ5253B-CM
New: CPZ59X-CMPZ5253B-CM
*The full excel list of all affected items and corresponding replacement wafer process types can be
found on Central’s website: https://www.centralsemi.com/process-change-notices.
Reason for change:
Replacement wafer processes provide improved and consistent yield, as well as an enhanced
metallization.
Effect of change:
This change does not affect the fit, form, or function of any device. The new wafer processes meet all
electrical specifications of the individual devices listed on the following page. This change re
Qualification data:
Test
Condition
Failure rate
Temperature Cycling (TC)
T= -65°C to +150°C
1000 cycles. Dwell time = 15 min.
JESD22-A104
0/77
High Temperature Reverse Bias
(HTRB)
T=125°C, t=1000 hours, V
R
=V
Z
JESD22-A108
0/77
Reverse Load Life (RLL)
Tj =125°C, t = 1000 hours.
Pd=277mW. Iz=52.5mA
JESD22-A110
0/77
Earliest effective date of change:
December 8, 2022
Sample availability:
Please contact your salesperson or manufacturer’s representative for samples.
https://www.centralsemi.com/process-change-notices
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Page 2 of 3 R0
PCN #243
Final Notification Date:
December 8, 2022
Figure 1. CPZ28X Chip Geometry (old)
Die Size: 13 x 13 mils
Die Thickness: 5.5 mils
Bond Pad Area (Anode): 7 x 7 mils
Topside Metal: Al (13,000Å)
Backside Metal: Au (12,000Å)
Figure 2. CPZ58X Chip Geometry (new) Figure 3. CPZ59X Chip Geometry (new)
BACKSIDE CATHODE R0
ANODE
Die Size: 13 x 13 mils Die Size: 13 x 13 mils
Die Thickness: 5.5 mils Die Thickness: 5.5 mils
Bond Pad Area (Anode): 5.9 x 5.9 mils Bond Pad Area (Anode): 5.9 x 5.9 mils
Topside Metal: AlSiCu (35,000Å) Topside Metal: Al (20,000Å)
Backside Metal: AuAs (12,000Å) Backside Metal: AuAs (12,000Å)
ANODE
BACKSIDE CATHODE
R0