RS6G120BG
Nch 40V 210A Power MOSFET
Datasheet
llOutline
V
DSS
40V
R
DS(on)
(Max.)
1.34mΩ
I
D
±210A
HSOP8
P
D
104W
llInner circuit
llFeatures
1) Low on - resistance
2) High power package (HSOP8)
3) Pb-free plating ; RoHS compliant
4) Halogen free
5) 100% Rg and UIS tested
llPackaging specifications
Type
Packing
Embossed
Tape
Reel size (mm) 330
llApplication
Tape width (mm) 12
Switching
Quantity (pcs) 2500
Taping code TB1
Marking RS6G120BG
llAbsolute maximum ratings (T
a
= 25°C ,unless otherwise specified)
Parameter Symbol Value Unit
Drain - Source voltage
V
DSS
40 V
Continuous drain current
Silicon limit (V
GS
=10V) I
D
*1
±210 A
T
c
= 25°C (V
GS
=10V) I
D
*2
±120 A
Pulsed drain current
I
DP
*3
±840 A
Gate - Source voltage
V
GSS
±20 V
Avalanche current, single pulse
I
AS
*4
50 A
Avalanche energy, single pulse
E
AS
*4
187 mJ
Power dissipation
P
D
*2
104 W
P
D
*5
3.0 W
Junction temperature
T
j
150 ℃
Operating junction and storage temperature range
T
stg
-55 to +150 ℃
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© 2022 ROHM Co., Ltd. All rights reserved.
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20221115 - Rev.004
RS6G120BG
Datasheet
llThermal resistance
Parameter Symbol
Values
Unit
Min. Typ. Max.
Thermal resistance, junction - case
R
thJC
*2
- - 1.2 ℃/W
Thermal resistance, junction - ambient
R
thJA
*5
- - 41.7 ℃/W
llElectrical characteristics (T
a
= 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
40 - - V
Breakdown voltage
temperature coefficient
ΔV
(BR)DSS
I
D
= 1mA
- 28.9 - mV/℃
ΔT
j
referenced to 25℃
Zero gate voltage
drain current
I
DSS
V
DS
= 40V, V
GS
= 0V
- - 2 μA
Gate - Source leakage current
I
GSS
V
GS
= ±20V, V
DS
= 0V - - ±200 nA
Gate threshold voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1mA
1.0 - 2.5 V
Gate threshold voltage
temperature coefficient
ΔV
GS(th)
I
D
= 1mA
- -4.6 - mV/℃
ΔT
j
referenced to 25℃
Static drain - source
on - state resistance
R
DS(on)
*6
V
GS
= 10V, I
D
= 90A - 1.03 1.34
mΩ
V
GS
= 4.5V, I
D
= 60A - 1.74 2.43
Gate resistance
R
G
- - 1.2 - Ω
Forward Transfer
Admittance
|Y
fs
|
*6
V
DS
= 5V, I
D
= 60A
50 - - S
*1 Limited by silicon chip capability.
*2 T
c
=25℃, Limited only by maximum temperature allowed.
*3 Pw ≤ 10μs , Duty cycle ≤ 1%
*4 L ⋍ 0.1mH, V
DD
= 20V, R
G
= 25Ω, Starting T
j
= 25℃ Fig.3-1,3-2
*5 Mounted on a Cu board (40×40×0.8mm)
*6 Pulsed
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© 2022 ROHM Co., Ltd. All rights reserved.
2/10
20221115 - Rev.004