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QW-JB083
RoHS Device
BAT54-HF Series
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Halogen Free
Features
- High current capability.
- Low forward voltage drop.
- Extremely fast switching speed.
Maximum Rating (at Ta=25°C unless otherwise noted)
Symbol
Value Unit
V
21
Max. average forward rectified current
IFSM
200
mW
125
PD
Power dissipation
Peak forward surge current 8.3 ms single half sine-wave
200
mA
Typical thermal resistance
IFM
600
mA
°C
TJ
-50 to +150
Storage temperature range
Parameter
Dimensions in inches and (millimeter)
SOT-23
0.118(3.00)
0.110(2.80)
0.055(1.40)
0.047(1.20)
0.079(2.00)
0.071(1.80)
0.041(1.05)
0.019(0.50)
0.006(0.15)
0.100(2.55)
0.089(2.25)
0.004(0.10)
0.012(0.30)
0.020(0.50)
0.000(0.00)
1 2
3
VDC
VRRM
VRMS
Max. repetitive peak reverse voltage
Max. DC blocking voltage
V
30
Max. RMS voltage
V
RθJA
°C/W
junction temperature
30
500
0.035(0.90)
0.012(0.30)
0.003(0.08)
SMD Schottky Barrier Diodes
Circuit Diagram
1 2
3
1 2
3
1 2
3
BAT54-HF
1 2
3
BAT54A-HF BAT54C-HF BAT54S-HF
TSTG
°C
Mechanical data
- Case: SOT-23, molded plastic.
- Epoxy : UL 94V-0.
Electrical Characteristics (at Ta=25°C unless otherwise noted)
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Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Rating and Characteristic Curves (BAT54-HF Series)
Fig.1 - Forward Characteristics
Forward Voltage, VF (mV)
Forward Current, IF (mA)
Fig.2 - Reverse Characteristics
Reverse Voltage, VR (V)
Reverse Current, IR (µA)
0 3010 200
10
0.01
0.1
1
0.01
10
100
200
200 1000400 600 800
Fig.3 - Capacitance Characteristics
Reverse Voltage, VR (V)
Capacitance Between Terminals, CT (pF)
Fig.4 - Power Derating Curve
Ambient Temperature, Ta (°C)
Power Dissipation, PD (mW)
0 25 50 75 1250
0
50
150
250
0
4
12
20
5 10 15 20 30
1
0.1
100
200
8
16
Ta=25°C
f=1MHz
QW-JB083
SMD Schottky Barrier Diodes
Parameter
Symbol
Unit
Maximum Forward voltage
Maximum reverse current
Type junction capacitance
Reverse recovery time
Conditions
Max.
VF2
VF3
VF4
VF5
VR
IR
Cj
trr
IF=1mA
IF=10mA
IF=30mA
IF=100mA
IR=100µA
VR=25V
VR=1V, f=1MHz
Min.
Typ.
240
30
320
400
500
1000
2.0
10
5
mV
μA
V
pF
ns
IF=IR=10mA, IRR=0.1xIR, RL=100Ω
VF1
IF=0.1mA
Maximum reverse breakdown voltage
10025
Ta=25°C
Ta=100°C
5 15 25
100
300
Ta=25°C
Ta=100°C