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QW-JB102
SMD Schottky Barrier Diodes
RoHS Device
BAT54xWT-HF Series
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Halogen Free
Mechanical data
- Case: SOT-323, molded plastic.
- Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102.
Features
- Epoxy meets UL-94 V-0 flammability rating.
- Moisture sensitivity level 1.
- Surface mount device.
- Low forward voltage.
Circuit Diagram
BAT54WT-HF
1 2
3
BAT54CWT-HF
1 2
3
BAT54AWT-HF
1 2
3
BAT54SWT-HF
1 2
3
Dimensions in inches and (millimeter)
SOT-323
0.087(2.20)
0.071(1.80)
0.053(1.35)
0.045(1.15)
0.055(1.40)
0.047(1.20)
1 2
3
0.010(0.25)
0.004(0.10)
0.096(2.45)
0.083(2.10)
0.004(0.10)
0.039(1.00)
0.035(0.90)
0.016(0.40)
0.006(0.15)
0.000(0.00)
Maximum Rating (at Ta=25°C unless otherwise noted)
Symbol
Value UnitParameter
V
30
IF
200
mA
A
Pd
0.6
°C/W
500
Thermal resistance, junction to ambient
Total power dissipation @ Ta=25°C
200
Forward continuous current
Continuous reverse voltage
VR
RθJA
TSTG
Storage temperature range
°C
Operation junction temperature range
TJ
-55 to +125
Non-repetitive peak forward surge current @ t < 1s
IFSM
mW
°C
-55 to +125
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Max
Unit
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Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Min
Rating and Characteristic Curves (BAT54xWT-HF Series)
Max. DC reverse current
VR = 25V
IR
μA
Typ. junction Capacitance
CJ
pF
2
5
VR = 1V, f = 1MHz
Max. reverse recovery time
trr
ns
IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω
10
Max. instantaneous forward voltage
IFM = 10mA
VF
0.40
V
IFM = 0.1mA
IFM = 1mA
IFM = 100mA
IFM = 30mA
0.32
1.00
0.50
0.24
Fig.3 - Typical Capacitance vs.
Reverse Voltage
0 3020
0
12
Total Capacitance, CT (pF)
Reverse Voltage, VR (V)
10
10
155 25
4
Fig.4 - Power Derating Curve
0 125100
0
Power Dissipation, PD (mW)
Ambient Temperature, TA (°C)
50
100
200
7525
250
50
150
Fig.1 - Forward Characteristic
0 5
0.01
10
10 3015 20
Instantaneous Reverse Voltage, VR (V)
0.1
1
Instantaneous Reverse Current, IR (µA)
Instantaneous Forward Current, IF (A)
Fig.2 - Typical Reverse Characteristic
Instantaneous Forward Voltage, VF (V)
0.1
1
100
25
SMD Schottky Barrier Diodes
QW-JB102
Typ
2
6
8
f = 1MHz
0
0.001
TA=75°C
TA=25°C
TA=125°C
TA=0°C
0.6 0.80.40.2
0.01
0.001
0.0001
1.0
TA=25°C
TA=75°C
TA=125°C
TA=0°C
TA=-40°C