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DS-CPC3981Z-R02
1
CPC3981Z
800V, 45 N-Channel
Depletion-Mode MOSFET
V
(BR)DSX
R
DS(on)
I
DSS
Package
800V 45 100mA SOT-223-2L
Applications
Features
Description
Ordering Information
Circuit Symbol
• Normally-On Switches
• Solid State Relays
• Converters
• Telecommunications
• Power Supply
• Current Regulators
• High Breakdown Voltage: 800V
• Low On-Resistance: 45 max.
• Low V
GS(off)
: -1.4V to -3.1V
• High Input Impedance
• Small Package Size: SOT-223-2L
Package Pinout
D
S
G
Part # Description
CPC3981ZTR SOT-223-2L: Tape and Reel (3000/Reel)
D
G S
4
13
The CPC3981Z is an 800V, N-channel,
depletion-mode, Field Effect Transistor (FET) in a
modified SOT-223 package to provide greater
separation of the drain and source leads for high
voltage applications.
Fabricated using Littelfuse Integrated Circuits'
proprietary vertical DMOS process yields a robust
MOSFET device with high input impedance and high
voltage performance.
The CPC3981Z's highly reliable MOSFET has
been used extensively in Littelfuse Integrated
Circuits’s Solid State Relays in power, industrial, and
telecommunications applications.
The CPC3981Z is available in the SOT-223-2L
package.
www.littelfuse.com
2
R02
CPC3981Z
Absolute Maximum Ratings @ 25ºC
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)
Parameter Ratings Units
Drain-to-Source Voltage 800 V
Gate-to-Source Voltage ±15 V
Pulsed Drain Current 150 mA
Total Package Dissipation
1
1.8 W
Operational Temperature -55 to +125 ºC
Junction Temperature, Maximum +125 ºC
Storage Temperature -55 to +125 ºC
1
Mounted on 1"x1" 2 oz. Copper FR4 board.
Parameter Symbol Conditions Min Typ Max Units
Drain-to-Source Breakdown Voltage V
(BR)DSX
V
GS
= -5.5V, I
D
=1µA 800 - - V
Gate-to-Source Off Voltage V
GS(off)
V
DS
= 15V, I
D
=1A -1.4 - -3.1 V
Change in V
GS(off)
with Temperature dV
GS(off)
/dT V
DS
= 15V, I
D
=1A - - -6.3 mV/ºC
Gate Body Leakage Current I
GSS
V
GS
=±15V, V
DS
=0V - - 100 nA
Drain-to-Source Leakage Current I
D(off)
V
GS
= -5.5V, V
DS
=800V - - 1 µA
Saturated Drain-to-Source Current I
DSS
V
GS
= 0V, V
DS
=15V 100 - - mA
Static Drain-to-Source On-State Resistance R
DS(on)
V
GS
= 0V, I
D
=100mA
- 32.5 45
Change in R
DS(on)
with Temperature dR
DS(on)
/dT - - 2.5 %/ºC
Forward Transconductance g
fs
I
D
= 50mA, V
DS
= 10V 100 - - m
Input Capacitance C
ISS
V
GS
= -3.5V
V
DS
= 25V
f= 1MHz
-
105
-pF
Common Source Output Capacitance C
OSS
7.5
Reverse Transfer Capacitance C
RSS
2.75
Source-Drain Diode Voltage Drop V
SD
V
GS
= -5.5V, I
SD
=100mA - 0.67 0.95 V
Parameter Symbol Conditions Min Typ Max Units
Turn-On Delay Time t
d(on)
V
DD
= 25V, I
D
= 50mA, V
GS
= 0V to -10V,
R
GEN
= 50
-
79.2 170
ns
Fall Time t
f
34.9 145
Turn-Off Delay Time t
d(off)
25.3 65
Rise Time t
r
19.7 35
Parameter Symbol Rating Units
Thermal Resistance
Junction to Ambient
JA
55
ºC/W
Junction to Case
JC
23
Timing Characteristics @ 25ºC (Unless Otherwise Noted)
Thermal Characteristics
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Typical values are characteristic of the device at +25°C, and
are the result of engineering evaluations. They are provided for
information purposes only, and are not part of the manufacturing
testing requirements.