ASS8050-L-HF Thru. ASS8050-H-HF (NPN)
RoHS Device
General Purpose Transistors
AQW-JTR13
Page 1
REV:A
Company reserves the right to improve product design , functions and reliability without notice.
Comchip Technology CO., LTD.
Halogen Free
Mechanical data
- Case: SOT-23, molded plastic.
- Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102.
Features
- Epoxy meets UL-94 V-0 flammability rating.
- Moisture sensitivity Level 1.
- AEC-Q101 Qualified.
Circuit Diagram
3
1 2
1. Base
2. Emitter
3. Collector
Dimensions in inches and (millimeter)
SOT-23
3
1 2
0.055(1.40)
0.047(1.20)
0.118(3.00)
0.110(2.80)
0.079(2.00)
0.071(1.80)
0.041(1.05)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.008(0.20)
0.004(0.10)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
Parameter Value Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
VCBO
VCEO
VEBO
IC
40
25
5
1.5
V
V
V
A
Maximum Ratings (at TA=25°C unless otherwise noted)
Symbol
Junction temperature
TJ
150
°C
Storage temperature range
TSTG
-55 to +150
°C
Total device dissipation
PD
300
mW
General Purpose Transistors
Symbol
Parameter
Conditions
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Emitter cut-off current
100
V
V
V
nA
V(BR)CEO
V(BR)CBO
V(BR)EBO
IEBO
IC = 100μA, IB = 0
IC = 100��A, IE = 0
IE = 100μA, IC = 0
VCE = 20V, IB = 0
Min
40
25
5
Electrical Characteristics (at TA=25°C unless otherwise noted)
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REV:A
Company reserves the right to improve product design , functions and reliability without notice.
Comchip Technology CO., LTD.
Collector cut-off current
DC current gain
100
350
ICEO
hFE(1)
VEB = 5V, IC = 0
120
Collector-emitter saturation voltage
Base-emitter saturation voltage
0.5
1.2
V
V
VCE(sat)
VBE(sat)
IC = 800mA, IB = 80mA
Transition frequency
fT
VCE = 10Vdc, IC = 50mA, f = 30MHz
100
hFE(2)
40
AQW-JTR13
Collector cut-off current
100
ICBO
VCB = 40V, IE = 0
VCE = 1V, IC = 100mA
Small-signal characteristics
nA
nA
MHz
VCE = 1V, IC = 800mA
IC = 800mA, IB = 80mA
Range
Rank
Classification of hFE (1)
ASS8050-L-HF ASS8050-H-HF
120-200 200-350