SS8050-L-HF Thru. SS8050-H-HF (NPN)
RoHS Device
General Purpose Transistors
QW-JTR112
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Company reserves the right to improve product design , functions and reliability without notice.
Comchip Technology CO., LTD.
Halogen Free
Mechanical data
- Case: SOT-23, molded plastic.
- Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102.
Features
- Epoxy meets UL-94 V-0 flammability rating.
- Moisture sensitivity Level 1.
Circuit Diagram
3
1 2
1. Base
2. Emitter
3. Collector
Dimensions in inches and (millimeter)
SOT-23
3
1 2
0.055(1.40)
0.047(1.20)
0.118(3.00)
0.110(2.80)
0.079(2.00)
0.071(1.80)
0.041(1.05)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.008(0.20)
0.004(0.10)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
- High conductance.
- Surface mount package ideally suited for
automatic insertion.
Parameter Value Unit
Minimum collector-base voltage
Minimum collector-emitter voltage
Minimum emitter-base voltage
Collector current
VCBO
VCEO
VEBO
IC
40
25
5
1.5
V
V
V
A
Maximum Ratings (at TA=25°C unless otherwise noted)
Symbol
TJ
°C
Storage temperature range
TSTG
-55 to +150
°C
PC
300
mW
Conditions
Maximum collector-emitter cut-off current
Maximum collector-base cut-off current
Maximum emitter-base cut-off current
Collector power dissipation
Operation junction temperature range
VCE = 20Vdc
VCB = 40Vdc
VEB = 5Vdc
IC = 100µAdc, IB = 0
IC = 100µAdc, IE = 0
IE = 100µAdc, IC = 0
nAdc
ICEO
ICBO
IEBO
-55 to +150
100
100
100
General Purpose Transistors
Symbol
Parameter
Conditions
Max
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Emitter-base cut-off current
100
V
V
V
nAdc
VCEO
VCBO
VEBO
IEBO
IC = 100μAdc, IB = 0
IC = 100μAdc, IE = 0
IE = 100μAdc, IC = 0
VCE = 20Vdc
Min
40
25
5
Electrical Characteristics (at TA=25°C unless otherwise noted)
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REV:A
Company reserves the right to improve product design , functions and reliability without notice.
Comchip Technology CO., LTD.
Collector-emitter cut-off current
DC current gain
100
350
ICEO
hFE(1)
VEB = 5V
120
Collector-emitter saturation voltage
Base-emitter saturation voltage
0.5
1.2
Vdc
Vdc
VCE(sat)
VBE(sat)
IC = 800mA, IB = 80mA
Transition frequency
fT
IC = 50mA, VCE = 10Vdc, f = 30MHz
100
hFE(2)
40
Collector-base cut-off current
100
ICBO
VCB = 40Vdc
IC = 100mA, VCE = 1Vdc
Small-signal characteristics
nAdc
nAdc
MHz
IC = 800mA, VCE = 1Vdc
IC = 800mA, IB = 80mA
Range
Rank
Classification of hFE (1)
SS8050-L-HF SS8050-H-HF
120-200 200-350
QW-JTR112