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®
1N5711
SMALL SIGNAL SCHOTTKY DIODE
October 2001 - Ed: 1B
DO-35
Symbol Parameter Value Unit
V
RRM
Repetitive Peak Reverse Voltage 70 V
I
F
Forward Continuous Current* T
a
= 25°C 15 mA
P
tot
Power Dissipation*
T
a
= 25°C
430 mW
T
stg
T
j
Storage and Junction Temperature Range - 65 to 200
- 65 to 200
°C
T
L
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
230
°C
ABSOLUTE RATINGS (limiting values)
Symbol Test Conditions Value Unit
R
th(j-a)
Junction-ambient* 400 °C/W
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
** Pulse test: t
p
≤ 300µs δ<2%.
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
T
amb
= 25°C I
R
= 10µA
70 V
V
F
* *
T
amb
= 25°CI
F
= 1mA
0.41 V
T
amb
= 25°CI
F
= 15mA
1
I
R
* *
T
amb
= 25°CV
R
= 50V
0.2
µA
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
CT
amb
= 25°C V
R
= 0V f = 1MHz 2 pF
Ï„
T
amb
= 25°CI
F
= 5mA Krakauer Method
100 ps
DYNAMIC CHARACTERISTICS
Metaltosiliconjunctiondiodefeaturinghighbreak-
down, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detec-
tion and pulse application with broad dynamic
range. Matched batches are available on request
DESCRIPTION
1N5711
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Fig. 1: Forward current versus forward voltage at
low level (typical values).
Fig. 2: Capacitance C versus reverse applied
voltage V
R
(typical values).
Fig. 3: Reverse current versus ambient tempera-
ture.
Fig. 4: Reverse current versus continuous reverse
voltage (typical values).