SFX5N80
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NOMENCLATURE
ORDERING INFORMATION
Part No. Package Marking Material Packing
SFF5N80 TO-220F-3L SFF5N80 Pb free Tube
SFP5N80 TO-220-3L SFP5N80 Pb free Tube
5A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
This power mosfet is an N-channel enhancement mode
power MOS field effect transistor which is produced using Hi-
semicon proprietary F-Cell
TM
structure VDMOS technology.
The improved planar stripe cell and the improved guarding ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers,
DC-DC converters and H-bridge PWM motor drivers.
FEATURES
◆ 5A,800V, R
DS(on)
（
typ
）
=2.0Ω@V
GS
=10V
◆ Low gate charge
◆ Low Crss
◆ Fast switching
◆ Improved dv/dt capability
SFX5N80
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ABSOLUTE MAXIMUM RATINGS (T
C
=25°C unless otherwise noted)
Ratings
Characteristics Symbol
SFF5N80 SFP5N80
Unit
Drain-Source Voltage V
DS
800 V
Gate-Source Voltage V
GS
±30 V
T
C
= 25°C 5.0
Drain Current
T
C
= 100°C
I
D
3.2
A
Drain Current Pulsed I
DM
20 A
48 146 W Power Dissipation(T
C
=25°C)
-Derate above 25°C
P
D
0.38 1.17 W/°C
Single Pulsed Avalanche Energy (Note 1) E
AS
323 mJ
Operation Junction Temperature Range T
J
-55～+150
°C
Storage Temperature Range T
stg
-55～+150
°C
THERMAL CHARACTERISTICS
Ratings
Characteristics Symbol
SFF5N80 SFP5N80
Unit
Thermal Resistance, Junction-to-Case R
θJC
2.60 0.86 °C/W
Thermal Resistance, Junction-to-Ambient R
θJA
120 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Characteristics Symbol Test conditions Min. Typ. Max. Unit
Drain -Source Breakdown Voltage B
VDSS
V
GS
=0V, I
D
=250µA 800 -- -- V
Drain-Source Leakage Current I
DSS
V
DS
=800V, V
GS
=0V -- -- 1.0 µA
Gate-Source Leakage Current I
GSS
V
GS
=±30V, V
DS
=0V -- -- ±100 nA
Gate Threshold Voltage V
GS(th)
V
GS
= V
DS
, I
D
=250µA 2.0 -- 4.0 V
Static Drain- Source On State
Resistance
R
DS(on)
V
GS
=10V, I
D
=2.5A -- 2.0 2.7
Ω
Input Capacitance C
iss
-- 677.1
--
Output Capacitance C
oss
-- 71.0
--
Reverse Transfer Capacitance C
rss
V
DS
=25V, V
GS
=0V,
f=1.0MHz
-- 4.0
--
pF
Turn-on Delay Time t
d(on)
-- 11.9
--
Turn-on Rise Time t
r
-- 23.1
--
Turn-off Delay Time t
d(off)
-- 25.3
--
Turn-off Fall Time t
f
V
DD
=400V, I
D
=5.0A,
R
G
=25Ω
(Note2, 3)
-- 23.1
--
ns
Total Gate Charge Q
g
-- 15.16
--
Gate-Source Charge Q
gs
-- 4.27 --
Gate-Drain Charge Q
gd
V
DS
=640V, I
D
=5.0A,
V
GS
=10V
(Note2,
3)
-- 6.78 --
nC