SFX5N65
Http://www.hi-semicon.com Rev 1.1 Page 1 of 11
ORDERING INFORMATION
5A, 650V N-CHANNEL POWER MOSFET
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect
transistors are produced using Hi-semicon’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
◆V
DS
(V)=650V, I
D
=5A
◆R
DS(ON)
TYP:2.1Ω@V
GS
=10V I
D
=2.5A
MAX:2.5Ω
Applications
◆Power faction correction (PFC)
◆Switched mode power supplies (SMPS)
◆Uninterruptible power supply (UPS)
◆LED lighting power
Part No. Package Marking Material Packing
SFF5N65 TO-220F-3L SFF5N65 Pb Free Tube
SFU5N65 TO-251J/D-3L SFU5N65 Pb Free Tube
SFD5N65 TO-252-2L SFD5N65 Pb Free Reel
SFX5N65
Http://www.hi-semicon.com Rev 1.1 Page 2 of 11
ABSOLUTE MAXIMUM RATINGS
(T
J
=25C unless otherwise noted)
Characteristics Symbol
Ratings Unit
SFF5N65 SFU5N65/SFD5N65
Drain-Source Voltage V
DS
650 V
Gate-Source Voltage V
GS
±30 V
Drain Current
T
C
= 25
C
I
D
5
A
T
C
= 100C 3.1
Drain Current Pulsed
(Note 1)
I
DM
20 A
Power Dissipation(T
C
=25C)
-Derate above 25C
P
D
33 79 W
0.26 0.63
W/C
Single Pulsed Avalanche Energy (Note 2) E
AS
242 mJ
Operation Junction Temperature Range T
J
-55～+150
C
Storage Temperature Range T
stg
-55��+150
C
Maximum lead temperature for soldering
purposes,1/8" from case for 5 seconds
TL
300
℃
THERMAL CHARACTERISTICS
Characteristics Symbol
MAX
Unit
SFF4N65 SFU4N65/SFD4N65
Thermal Resistance, Junction-to-Case
R
θJC
4.17 1.61
C/W
Thermal Resistance, Junction-to-Ambient
R
θJA
62.5 62.0
C/W
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Test conditions Min. Typ. Max. Unit
Off Characteristics
Drain -Source Breakdown Voltage B
VDSS
V
GS
=0V, I
D
=250µA 650 -- -- V
Drain-Source Leakage Current I
DSS
V
DS
=650V, V
GS
=0V -- -- 1 uA
Gate-Source Leaka
g
e Current I
GSS
V
GS
=30V, V
DS
=0V -- -- 100 nA
Gate-Source Leakage Current I
GSS
V
GS
=-30V, V
DS
=0V -- -- -100 nA
On Characteristics
Gate Threshold Voltage V
GS
(
th
)
V
GS
= V
DS
, I
D
=250µA 2 -- 4.0 V
Static Drain- Source On State
Resistance
R
DS(on)
V
GS
=10V, I
D
=2.5A -- 2.1 2.5
D
y
namic Characteristics
Gate Resistance Rg V
GS
=0V; f=1.0MHZ 1 --
10
--
--
--
Input Capacitance C
iss
V
DS
=25V
V
GS
=0V
f=1.0MHZ
-- 471
pFOutput Capacitance C
oss
-- 58
Reverse Transfer Capacitance C
rss
-- 5.5
Switchin
g
Characteristics
Turn-on Delay Time t
d(on) V
DD
=325V; V
GS
=10V
R
G
=25; I
D
=5A (Note 3.4)
-- 13.8
--
ns
Turn-on Rise Time t
r
-- 31.9
--