SFX5N50
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ORDERING INFORMATION
Part No.
Package
Marking
Material
Packing
SFP5N50
TO-220-3L
SFP5N50
Pb free
Tube
SFF5N50
TO-220F-3L
SFF5N50
Pb free
Tube
SFD5N50
TO-252-2L
SFD5N50
Pb free
Tube
SFD5N50-TR
TO-252-2L
SFD5N50
Pb free
Tape & Reel
SFU5N50
TO-251J-3L
SFU5N50
Pb free
Tube
5A, 500V N-CHANNEL MOSFET
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect
transistors are produced using Hi-semicon’s proprietary, planar
stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies,active power factor
correction,electronic lamp ballasts based on half bridge
topology.
FEATURES
◆ 5.0A,500V,R
DS(on)
=1.2@V
GS
=10V
◆ Low gate charge
◆ 100% avalanche tested
◆ Fast switching
◆ Improved dv/dt capability
NOMENCLATURE
TO-220F-3L TO-220-3L
2
3
1
1.Gate 2.Drain 3.Source
1
1
2
2
3
3
TO-252-2L
TO-251J-3L
SFX5N50
Http://www.hi-semicon.com Page 2 of 9
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Symbol
Unit
SFP5N50
SFF5N50
SFD5N50
SFU5N50
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
V
Drain Current
T
C
=25��C
I
D
A
T
C
=100°C
Drain Current Pulsed
I
DM
A
Power Dissipation(T
C
=25C)
-Derate above 25C
P
D
87.5
42
76
80
W
0.7
0.34
0.61
0.64
W/C
Single Pulsed Avalanche Energy (Note 1)
E
AS
mJ
Operation Junction Temperature Range
T
J
-55～+150
C
Storage Temperature Range
T
stg
-55～+150
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Ratings
Unit
SFP5N50
SFF5N50
SFD5N50
SFU5N50
Thermal Resistance, Junction-to-Case
R
θJC
1.43
2.94
1.64
1.56
C/W
Thermal Resistance, Junction-to-Ambient
R
θJA
62.5
120
110
110
C/W
ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted)
Characteristics
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Drain -Source Breakdown Voltage
B
VDSS
V
GS
=0V, I
D
=250µA
500
--
--
V
Drain-Source Leakage Current
I
DSS
V
DS
=500V, V
GS
=0V
--
--
1.0
µA
Gate-Source Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
--
--
±100
nA
Gate Threshold Voltage
V
GS(th)
V
GS
= V
DS
, I
D
=250µA
2.0
--
4.0
V
Static Drain- Source On State
Resistance
R
DS(on)
V
GS
=10V, I
D
=2.5A
--
1.2
1.5
Input Capacitance
C
iss
V
DS
=25V,V
GS
=0V,
f=1.0MHZ
--
479
--
pF
Output Capacitance
C
oss
--
72
--
Reverse Transfer Capacitance
C
rss
--
2.2
--
Turn-on Delay Time
t
d(on)
V
DD
=250V,I
D
=5A,
R
G
=25
(Note 2,3)
--
15.3
--
ns
Turn-on Rise Time
t
r
--
37.4
--
Turn-off Delay Time
t
d(off)
--
27.0
--
Turn-off Fall Time
t
f
--
22.2
--
Total Gate Charge
Q
g
V
DS
=400V,I
D
=5A,
V
GS
=10V
(Note 2,3)
--
9.1
--
nC
Gate-Source Charge
Q
gs
--
2.7
--
Gate-Drain Charge
Q
gd
--
3.1
--