SFX5N50
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ORDERING INFORMATION
5A, 500V N-CHANNEL POWER MOSFET
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect
transistors are produced using Hi-semicon’s proprietary, planar
stripe, VDMOS technology.
Features
◆V
DS
=500V, I
D
=5A
◆R
DS(ON)
TYP:1.2Ω@V
GS
=10V I
D
=2.5A
MAX:1.5Ω
Applications
◆Power faction correction (PFC)
◆Switched mode power supplies (SMPS)
◆Uninterruptible power supply (UPS)
◆LED lighting power
Part No. Package Marking Material Packing
SFF5N50 TO-220F-3L SFF5N50 Pb free Tube
SFD5N50 TO-252-2L SFD5N50 Pb free Reel
SFX5N50
Http://www.hi-semicon.com Rev 1.1 Page 2 of 9
ABSOLUTE MAXIMUM RATINGS
(T
J
=25C unless otherwise noted)
Characteristics Symbol
Ratings
Unit
SFF5N50 SFD5N50
Drain-Source Voltage V
DS
500 V
Gate-Source Voltage V
GS
±30 V
Drain Current
T
C
= 25
C
I
D
5
A
T
C
= 100C 3.5
Drain Current Pulsed
(Note 1)
I
DM
20 A
Power Dissipation(T
C
=25C)
-Derate above 25C
P
D
40 73 W
0.35 0.61
W/C
Single Pulsed Avalanche Energy (Note 2) E
AS
320 mJ
Operation Junction Temperature Range T
J
-55～+150
C
Storage Temperature Range T
stg
-55～+150
C
Maximum lead temperature for soldering
purposes,1/8" from case for 5 seconds
TL
300
C
THERMAL CHARACTERISTICS
Characteristics Symbol
MAX
Unit
SFF5N50 SFD5N50
Thermal Resistance, Junction-to-Case
R
θJC
2.83 1.57
C/W
Thermal Resistance, Junction-to-Ambient R
θJA
62.5 62.0
C/W
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Test conditions Min. Typ. Max. Unit
Off Characteristics
Drain -Source Breakdown Volta
g
e B
VDSS
V
GS
=0V, I
D
=250µA 500 --
--
--
--
-- V
Drain-Source Leaka
g
e Current I
DSS
V
DS
=500V, V
GS
=0V -- 100 nA
Gate-Source Leakage Current I
GSS
V
GS
=30V, V
DS
=0V -- 100 nA
Gate-Source Leakage Current I
GSS
V
GS
=-30V, V
DS
=0V -- -100 nA
On Characteristics
Gate Threshold Voltage V
GS(th)
V
GS
= V
DS
, I
D
=250µA 2.0 2.8 4.0 V
Static Drain- Source On State
Resistance
R
DS(on)
V
GS
=10V, I
D
=2.5A -- 1.2 1.5
Dynamic Characteristics
Gate Resistance Rg V
GS
=0V; f=1.0MHZ 1 3
10
Input Capacitance C
iss
V
DS
=25V
V
GS
=0V
f=1.0MHZ
-- 550
--
pFOutput Capacitance C
oss
-- 60
--
Reverse Transfer Capacitance C
rss
-- 1.8
--
Switching Characteristics
Turn-on Delay Time t
d(on) V
DD
=250V R
G
=25
I
D
=5A (Note 3.4)
-- 16.1
--
ns
Turn-on Rise Time t
r
-- 35.4
--