SFX50N06
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ORDERING INFORMATION
50A, 60V N-CHANNEL MOSFET
GENERAL DESCRIPTION
This power mosfet is an N-channel enhancement mode power
MOS field effect transistor which is produced using Hi-semicon
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring terminal
have been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
Features
◆VDS(V)=60V,ID=50A
◆R
DS(ON)
TYP:15.9mΩ@V
GS
=10V, I
D
=25A
MAX:22mΩ
Applications
◆Power faction correction (PFC)
◆Switched mode power supplies (SMPS)
◆Uninterruptible power supply (UPS)
◆LED lighting power
Part No. Package Marking Material Packing
SFF50N06 TO-220F-3L SFF50N06 Pb Free Tube
SFP50N06 TO-220-3L SFP50N06 Pb Free Tube
SFD50N06 TO-252-2L SFD50N06 Pb Free Reel
TO-220F-3L
TO-252-2L
TO-220-3L
SFX50N06
Http://www.hi-semicon.com Rev 1.1 Page 2 of 10
ABSOLUTE MAXIMUM RATINGS
(T
J
=25C unless otherwise noted)
Characteristics Symbol
Ratings
Unit
SFF50N06 SFP50N06 SFD50N06
Drain-Source Voltage V
DS
60 V
Gate-Source Voltage V
GS
±20 V
Drain Current
T
C
= 25C
I
D
50
A
T
C
= 100
C 38
Drain Current Pulsed(Note 1) I
DM
200 A
Power Dissipation(T
C
=25
C)
-Derate above 25
C
P
D
62 110 88 W
0.62 0.88 0.72 W/
C
Single Pulsed Avalanche Energy (Note 2) E
AS
551 mJ
Operation Junction Temperature Range T
J
-55～+150
C
Storage Temperature Range T
stg
-55～+150
C
Maximum lead temperature for soldering
purposes,1/8" from case for 5 seconds
TL
300
C
THERMAL CHARACTERISTICS
Characteristics Symbol
MAX Unit
SFF50N06 SFP50N06 SFD50N06
Thermal Resistance, Junction-to-Case
R
θJC
1.78 1.14 1.40
C/W
Thermal Resistance, Junction-to-Ambient
R
θJA
62.5 62.5 62.5 C/W
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Test conditions Min. Typ. Max. Unit
Off Characteristics
Drain -Source Breakdown Voltage B
VDSS
V
GS
=0V, I
D
=250µA 60 66 -- V
Drain-Source Leaka
g
e Current I
DSS
V
DS
=60V, V
GS
=0V -- 0.6 100 nA
Gate-Source Leaka
g
e Current I
GSS
V
GS
=20V, V
DS
=0V -- -- 100 nA
Gate-Source Leakage Current I
GSS
V
GS
=-20V, V
DS
=0V -- -- -100 nA
On Characteristics
Gate Threshold Voltage V
GS(th)
V
GS
= V
DS
, I
D
=250µA 2 2.9 4.0 V
Static Drain- Source On State
Resistance
R
DS(on)
V
GS
=10V, I
D
=10A -- 15.4 22 m
V
GS
=10V, I
D
=25A -- 15.9 22
m
Dynamic Characteristics
Gate Resistance Rg V
GS
=0V; f=1.0MHZ 1 1.8
10
Input Capacitance C
iss
V
DS
=25V
V
GS
=0V
f=1.0MHZ
-- 1530
--
pF
Output Capacitance C
oss
-- 340
--
Reverse Transfer Capacitance C
rss
-- 65
--
pF
Switching Characteristics
Turn-on Delay Time t
d(on)
V
DD
=30V;V
GS
=10V
R
G
=25; I
D
=50A
(Note 3.4)
-- 19.5
--
ns
Turn-on Rise Time t
r
-- 81.8
--
Turn-off Delay Time t
d(off)
-- 34.6
--