SFS2N7002
Http://www.hi-semicon.com Rev 1.0 Page 1 of 6
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
J
=25C unless otherwise noted)
Characteristics Symbol Ratings Unit
Drain-Source Voltage V
DS
60 V
Gate-Source Voltage V
GS
±20 V
Drain Current
T
C
= 25C
I
D
450
mA
T
C
= 70
C 360
Drain Current Pulsed (Note 1) I
DM
950 mA
Power Dissipation(T
C
=25C)
-Derate above 25C
P
D
0.7 W
0.005 W/
C
Operation Junction Temperature Range T
J
-55～+150
C
Storage Temperature Range T
stg
-55～+150
C
Maximum lead temperature for soldering
purposes,1/8" from case for 5 seconds
TL
300
℃
60V N-CHANNEL MOSFET
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect
transistors are produced using Hi-semicon’s proprietary, planar
stripe, DMOS technology.
Features
◆VDS(V)=60V, ID=450mA
◆R
DS(ON)
<2Ω @V
GS
=10V I
D
=450mA
Applications
◆High density cell design for low R
DS(on)
◆Voltage controlled small signal switch
◆Rugged and reliable
◆High saturation current capability
Part No. Package
SOT23
Marking Material Packing
SFS2N7002 7002K Pb Free Reel
SFS2N7002
Http://www.hi-semicon.com Rev 1.0 Page 2 of 6
THERMAL CHARACTERISTICS
Characteristics Symbol MAX Unit
Thermal Resistance, Junction-to-Case
R
θJC
180
C/W
Thermal Resistance, Junction-to-Ambient
R
θJA
62.5
C/W
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Test conditions Min. Typ. Max. Unit
Off Characteristics
Drain -Source Breakdown Voltage B
VDSS
V
GS
=0V, I
D
=250µA 60 -- -- V
Drain-Source Leakage Current I
DSS
V
DS
60V, V
GS
=0V -- -- 10 uA
Gate-Source Leaka
g
e Current I
GSS
V
GS
=20V, V
DS
=0V -- -- 30 uA
Gate-Source Leaka
g
e Current I
GSS
V
GS
=-20V, V
DS
=0V -- -- -30 uA
On Characteristics
Gate Threshold Voltage V
GS
(
th
)
V
GS
= V
DS
, I
D
=250µA 1.0 -- 2.5 V
Static Drain- Source On State
Resistance
R
DS(on)
V
GS
=10V, I
D
=450mA -- -- 2.0
V
GS
=4.5V, I
D
=200mA -- -- 4.0
Dynamic Characteristics
Input Capacitance C
iss
V
DS
=25V
V
GS
=0V
f=1.0MHZ
-- 31.7
50
pF
Output Capacitance C
oss
-- 8.2
--
Reverse Transfer Capacitance C
rss
-- 6.5
--
pF
Switchin
g
Characteristics
Turn-on Delay Time t
d(on)
V
DD
=30V; V
GS
=10V
R
G
=3.3; I
D
=450mA
(Note 2.3)
-- 13.1
--
ns
Turn-on Rise Time t
r
-- 9.8
--
Turn-off Delay Time t
d(off)
-- 43.7
--
Turn-off Fall Time t
f
-- 30.4
--
Total Gate Charge Q
g
V
DS
=50V, I
D
=450mA
V
GS
=4.5V
(Note 2.3)
-- 1.1
1.6
nc
Gate-Source Char
g
e Q
gs
-- 0.4 --
Gate-Drain Charge Q
gd
-- 0.6 --
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage V
SD
I
S
=450mA,V
GS
=0V -- -- 1.2 V
1.Pluse width limited by maximum junction temperature
2.Pulse Test: Pulse width ≤300μs, Duty cycle≤2%
3.Essentially independent of operating temperature