Note : 1. Mounted on infinite heatsink.
PARAMETER SYMBOL VALUE UNIT
Maximum repetitive peak reverse voltage V
RRM
100
V
Maximum average forward rectified current
per diode
per device
I
F(AV)
20
10
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
per diode I
FSM
160
A
Typical junction capacitance (V
R
=4V, f=1MHz) C
J
620
pF
Typical thermal resistance per diode (Note 1) R
JC
o
C/W
Operating junction temperature range T
J
-55 to + 150
o
C
Storage temperature range T
STG
-55 to + 150
o
C
Maximum rms voltage
V
RMS
70
V
MBR20100L
Low VF Schottky Barrier Rectifiers
FEA TURES
•
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• For use in low voltage, high frequency inverters
free wheeling, and polarlity protection applications.
•
Lead free in comply with EU RoHS
MECHANICAL DATA
• Polarity: As marked.
• Mounting Position: Any
•
Case:
molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
http://www.trr-jx.com
version: 02
2
TO- 220AB
J
M
D
K
L
HH
PIN
All Dimensions in millimeter
TO-220AB
DIM.
MIN. MAX.
A
C
D
E
F
G
H
B
O
M
L
K
J
I
2.35
1.45
1.25
PIN 1
PIN 3
PIN 2
1 2 3
15.10 15.90
3.65 3.95
3.60 4.40
13.00
--
1.10
1.40
2.55
0.45 0.95
4.35 4.75
10.40
9.90
A
F
G
I
C
B
O
E
0.55 0.35
6.35 6.65
2.55 3.15
9.40
8.60
ELECTRICAL CHARACTERISTICS(TA=25
o
C unless otherwise noted)
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Reverse Characteristics
V
F
, Forward Voltage (V)
Fig.4 Typical Forward Characteristics
T
C
, Case Temperature (°C)
Fig.1 Forward Current Derating Curve
V
R
, Reverse Bias Voltage (V)
Fig.2 Typical Junction Capacitance
RATING AND CHARACTERISTIC CURVES
PA RAMETE R SYMBOL TE ST CO NDITIONS MIN. TYP. MAX. UNIT
Breakdo wn voltage pe r di ode V
BR
I
R
=0.5mA 100 - - V
Instantaneo us forwa rd voltage pe r
diode
V
F
I
F
=3A
I
F
=5A
I
F
=10A
T
J
=25
o
C
-
-
-
0.49
0.55
0.65
-
0.58
0.7
V
I
F
=3A
I
F
=5A
I
F
=10A
T
J
=125
o
C
-
-
-
0.43
0.51
0.62
-
-
-
V
Revers e c urrent
per diod e I
R
V
R
=70V - 5 - A
V
R
=100V
T
J
=25
o
C
T
J
=125
o
C
-
-
-
7.2
50
-
A
mA
0
2
4
6
8
10
12
0 25 50 75 100 125 150
I
F
, Forward Current (A)
Per Diode
1
10
100
1000
110100
C
J
, Junction Capacitance (pF)
Per Diode
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
I
R
, Reverse Curren t (mA)
T
J
= 25°C
T
J
= 75°C
T
J
= 125°C
T
J
= 150°C
Per Diode
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
I
F
, Forward Current (A)
Per Diode
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
T
J
= 75°C
http://www.trr-jx.com
version: 02
MBR20100L
Low VF Schottky Barrier Rectifiers