S9015
特征 Features
与 S9014 配对; Complementary to S9014
最大功率耗散 200mW; Power Dissipation of 200mW
高稳定性和可靠性。High Stability and High Reliability
机械数据 Mechanical Data
SOT-23
Marking: M6
封装: SOT-23 封装 SOT-23 Small Outline Plastic Package
环氧树脂 UL 易燃等级 Epoxy UL: 94V-0
安装位置: 任意 Mounting Position: Any
极限值和温度特性(TA = 25℃ 除非另有规定)
Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.)
参数 Parameters 符号 Symbol 数值 Value 单位 Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -45 V
Emitter -Base Voltage VEBO -5 V
Collector Current-Continuous IC -100 mA
Collector Power Dissipation PC 200 mW
Junction Temperature Tj 150
℃
Storage Temperature Tstg -55-+150
℃
Thermal resistance From junction to ambient RθJA 625
℃/W
电特性 (TA = 25℃ 除非另有规定)
Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified).
界限 Limits
参数
Parameter
符号
Symbols
测试条件
Test Condition
Min Max
单位
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100uA, IE=0 -50 V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-0.1mA, IB=0 -45 V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100uA, IC=0 -5 V
Collector cut-off current
ICBO
VCB=-50V, IE=0 -100 nA
Emitter cut-off current
IEBO
VEB=-5V, IC=0 -100 nA
DC current gain
hFE
VCE=-5V, IC=-1mA 200 1000
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA, IB=-10mA -0.30 V
Base -emitter saturation voltage
VBE(sat)
IC=-100mA, IB=-10mA -1.00 V
Transition frequency
fT
VCE=-5V, IC=-10mA,f=30MHz 150 MHz
CLASSIFICATION OF hFE(1)
RANK L H
RANGE 200-450 450-1000
TRANSISTOR (
NPN)
http://www.trr-jx.com
version: 02
http://www.trr-jx.com
version: 02
