11A600V
N-CHANNELMOSFET
1.Description
ThisPowerMOSFETisproducedusingKIAadvancedSuper-Junctiontechnology.This
advancedtechnologyhasbeenespeciallytailoredtominimizeconductionloss,providesuperiorswitching
performance,andwithstandhighenergypulseintheavalancheandcommutationmode.Thesedevices
arewellsuitedforAC/DCpowerconversioninswitchingmodeoperationforhigherefficiency.
2. Features
n R
DS(on)
=0.34Ω@VGS=10V
n Lowgatecharge(typical33nC)
n Highruggedness
n Fastswitching
n 100%avalanchetested
n Improveddv/dtcapability
3. Pinconfiguration
1of8 Rev1.0OCT2015
Pin Function
1 Gate
2 Drain
3 Source
KIA
SEMICONDUCTORS
6
0
R380DS
KIA
SEMICONDUCTORS
KIA
SEMICONDUCTORS
11A600V
N-CHANNELMOSFET
4. Absolutemaximumratings
(T
C
=25 ºC,unlessotherwisenoted)
Parameter Symbol
Ratings
Units
Drain-sourcevoltage V
DSS
600 V
Draincurrent
T
C
=25°C
I
D
11* A
T
C
=100°C 6.7* A
Draincurrent(note1) I
DM
30* A
Gate-sourceVoltage V
GSS
± 30 V
Singlepulsedavalancheenergy(note2) E
AS
132 mJ
Avalanchecurrent(note1) I
AR
2.1 A
Repetitiveavalancheenergy(note1) E
AR
65 mJ
Peakdioderecoverydv/dt(note3) dv/dt 5.0 V/ns
Powerdissipation
T
C
=25°C
P
D
125 W
Derateabove25°C 1.0 W/°C
Operatingandstoragetemperaturerange T
J
,T
STG
-55to+150 °C
Maximumleadtemperatureforsolderingpurposes,
1/8"fromcasefor5seconds
T
L
300 °C
*Draincurrentlimitedbymaximumjunctiontemperature.
5. Thermalcharacteristics
Parameter Symbol 60R380DS Units
Thermalresistance,junction-to-case R
θJC
0.6 °C/W
Thermalresistance,case-to-sinkTyp. R
θCS
1.0 °C/W
Thermalresistance,junction-to-ambient R
θJA
62 °C/W
2of8 Rev1.0OCT2015
KIA
SEMICONDUCTORS
KIA
SEMICONDUCTORS
KIA
SEMICONDUCTORS
6
0
R380DS